IXYS reserves the right to change limits, test conditions, and dimensions.
IXTC 62N15P
IXTR 62N15P
Symbol Test Conditions Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 31 A, Note 1 14 24 S
C
iss
2250 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 660 pF
C
rss
185 pF
t
d(on)
27 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 62 A 38 ns
t
d(off)
R
G
= 10 Ω (External) 76 ns
t
f
35 ns
Q
g(on)
70 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 31 A 20 nC
Q
gd
38 nC
R
thJC
1.0 °C/W
R
thCS
0.15 ° C/W
Source-Drain Diode Characteristic Values
T
J
= 25° C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 62 A
I
SM
Repetitive 150 A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1 1.5 V
t
rr
I
F
= 25 A, -di/dt = 100 A/µs 150 ns
Q
RM
V
R
= 100 V, V
GS
= 0 V 2.0 µC
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
2: Test current I I
T
= 62 A.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
ISOPLUS220
TM
(IXTC) Outline
Ref: IXYS CO 0177 R0
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
ISOPLUS247 (IXTR) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
