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2DB1184Q-13

P1-P3P4-P6
2DB1184Q
Document number: DS31504 Rev. 5 - 2
1 of 6
www.diodes.com
May 2014
© Diodes Incorporated
2DB1184Q
50V PNP MEDIUM POWER TRANSISTOR IN TO252
Features
• BV
CEO
> -50V
• I
C
= -3A High Continuous Collector Current
• I
CM
= -4.5A Peak Pulse Current
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Medium Power Switching or Amplification Applications
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TO252 (DPAK)
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208
• Weight: 0.34 grams (approximate)
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
2DB1184Q-13 AEC-Q101 2DB1184Q 13 16 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2DB1184Q = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 14 = 2014)
WW = Week Code 01-52
YYWW
2DB1184Q
Top View
Device Schematic
Pin Out Configuration
Top view
TO252 (DPAK)
C
E
B
e3
C
E
B
2DB1184Q
Document number: DS31504 Rev. 5 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
2DB1184Q
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-60 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Continuous Collector Current
I
C
-3 A
Peak Pulse Collector Current
I
CM
-4.5 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
1.2 W
Power Dissipation @T
L
= +25°C
(Note 6)
P
D
15 W
Thermal Resistance, Junction to Lead (Note 5)
R
θJA
104 °C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
θJL
8.3 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Note: 5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)
1
Figure 1 Transient Thermal Response
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 110°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
2DB1184Q
Document number: DS31504 Rev. 5 - 2
3 of 6
www.diodes.com
May 2014
© Diodes Incorporated
2DB1184Q
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
BV
CBO
-60 — — V
I
C
= -50µA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-50 — — V
I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-5 — — V
I
E
= -50µA, I
C
= 0
Collector Cutoff Current
I
CBO
— — -1 µA
V
CB
= -40V, I
E
= 0
Emitter Cutoff Current
I
EBO
— — -1 µA
V
EB
= - 4V, I
C
= 0
ON CHARACTERISTICS (Note 8)
Collector-Emitter Saturation Voltage
V
CE(sat)
— — -1 V
I
C
= -2A, I
B
= -0.2A
Base-Emitter Saturation Voltage
V
BE(sat)
— — -1.2 V
I
C
= -1.5A, I
B
= -0.15A
DC Current Gain
h
FE
120 — 270 —
V
CE
= -3V, I
C
= -0.5A
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
— 110 — MHz
V
CE
= -5V, I
C
= -0.1A,
f = 30MHz
Output Capacitance
C
obo
— 26 — pF
V
CB
= -10V, f = 1MHz
Turn-On Time
t
on
— 109 — ns
V
CC
= 30V
I
CC
= 150mA
I
B1
= - I
B2
= 15mA
Delay Time
t
d
— 60 — ns
Rise Time
t
r
— 49 — ns
Turn-Off Time
t
off
— 280 — ns
Storage Time
t
s
— 246 — ns
Fall Time
t
f
— 34 — ns
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0
200
400
600
800
1,000
0.1 1 10
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
-I ,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(mA)
C
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
0
50
100
150
200
250
300
350
400
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 3 Typical DC Current Gain vs. Collector Current
h, D
C
C
U
R
R
EN
T
G
AIN
FE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A
V = -3V
CE
P1-P3P4-P6

2DB1184Q-13

Mfr. #:
Buy 2DB1184Q-13
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 2.5K BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
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