Characteristics STPS41H100C-Y
2/9 DocID018564 Rev 2
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.58 x I
F(AV)
+ 0.0045 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage, T
j
= -40 °C 100 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current, δ = 0.5, T
c
= 150 °C
Per diode 20
A
Per device 40
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 220 A
P
ARM
(1)
Repetitive peak avalanche power t
p
= 10 µs, T
j
= 125 °C 1300 W
T
stg
Storage temperature range -65 to +175 °C
T
j
Operating junction temperature
(2)
-40 to +175 °C
1. For pulse time duration derating, please refer to Figure 3. More details regarding the avalanche energy measurements
and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche
power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”.
2. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 1.5
°C/WPer device 0.8
R
th(c)
Coupling 0.1
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
--10µA
T
j
= 125 °C - 3 10 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 20 A
- - 0.80
V
T
j
= 125 °C - 0.62 0.67
T
j
= 25 °C
I
F
= 40 A
- - 0.90
T
j
= 125 °C - 0.70 0.76
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
