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NTSB40200CTG

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
1 Publication Order Number:
NTSB40200CT/D
NTSB40200CTG,
NTSJ40200CTG
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low V
F
= 0.53 V at I
F
= 5 A
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• These Devices are Pb−Free and Halogen Free/BFR Free
Typical Applications
• Switching Power Supplies including Telecom AC to DC Power
Stages, LED Lighting and ATX
• High Voltage DC−DC Converters
• Freewheeling and OR−ing Diodes
• Output Rectifier in Welding Power Supplies
• Industrial Automation
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
VERY LOW FORWARD
VOLTAGE, LOW LEAKAGE
SCHOTTKY BARRIER
RECTIFIERS 40 AMPERES,
200 VOLTS
1
3
2, 4
http://onsemi.com
PIN CONNECTIONS
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
D2PAK
CASE 418B
TO−220FP
CASE 221AH
3
4
1
2
NTSB40200CTG, NTSJ40200CTG
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200 V
Average Rectified Forward Current
(Rated V
R
, T
C
= 125°C) NTSB40200CTG Per device
(Rated V
R
, T
C
= 130°C) NTSB40200CTG Per diode
(Rated V
R
, T
C
= 65°C) NTSJ40200CTG Per device
(Rated V
R
, T
C
= 42°C) NTSJ40200CTG Per diode
I
F(AV)
40
20
20
20
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 115°C) NTSB40200CTG Per device
(Rated V
R
, Square Wave, 20 kHz, T
C
= 125°C) NTSB40200CTG Per diode
(Rated V
R
, Square Wave, 20 kHz, T
C
= 40°C) NTSJ40200CTG Per device
(Rated V
R
, Square Wave, 20 kHz, T
C
= 25°C) NTSJ40200CTG Per diode
I
FRM
80
40
40
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
250 A
Operating Junction Temperature T
J
−55 to +150 °C
Storage Temperature T
stg
−55 to +150 °C
ESD Rating (Human Body Model) 3A
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol NTSB40200CTG NTSJ40200CTG Unit
Typical Thermal Resistance
Junction−to−Case Per Diode
Junction−to−Case Per Device
Junction−to−Ambient Per Device
R
q
JC
R
q
JA
1.29
0.79
40
6.94
6.05
105
°C/W
ELECTRICAL CHARACTERISTICS
Rating Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 15 A, T
J
= 25°C)
(I
F
= 20 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 10 A, T
J
= 125°C)
(I
F
= 15 A, T
J
= 125°C)
(I
F
= 20 A, T
J
= 125°C)
V
F
0.68
0.74
0.79
0.84
0.53
0.60
0.64
0.68
−
−
−
1.45
−
−
−
0.80
V
Instantaneous Reverse Current (Note 1)
(V
R
= 180 V, T
J
= 25°C)
(Rated dc Voltage, T
J
= 25°C)
(V
R
= 180 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
3
5
5.3
7
−
100
−
30
mA
mA
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
NTSB40200CTG, NTSJ40200CTG
http://onsemi.com
3
TYPICAL CHARACTERISTICS
1 10 100
0.1
1
10
100
0.00 0.40 0.80 1.20 1.60 2.00 2.40
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
1.E−06
1.E−05
1.E−04
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−03
1.E−02
1.E−01
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
T
J
= 25°C
T
A
= −55°C
T
A
= 25°C
T
A
= −55°C
100
1k
10k
T
A
= 150°C
1.E−07
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
0 20 40 60 80 100 120 140 160 180 200
T
A
= −55°C
T
A
= −55°C
0 20 40 60 80 100 120 140 160 180 200
10
P1-P3P4-P6P7-P8

NTSB40200CTG

Mfr. #:
Buy NTSB40200CTG
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers LVFR 200V 40A
Lifecycle:
New from this manufacturer.
Delivery:
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