IS31AP4915A
Integrated Silicon Solution, Inc. – www.issi.com 4
Rev. B, 08/08/2013
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V
CC
-0.3V ~ +7.0V
Voltage at any input pin
-0.3V ~ V
CC
+0.3V
Maximum junction temperature, T
JMAX
150°C
Storage temperature range, T
STG
-65°C ~ +150°C
Operating temperature range, T
A
−40°C ~ +85°C
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
T
A
=25°C, V
CC
= 2.5V ~ 5.5V (unless otherwise noted). (Note 1)
Symbol Parameter Condition Min. Typ. Max. Unit
SV
CC
, PV
CC
Supply voltage 2.5 5.5 V
V
IH
High level input voltage 1.75 V
V
IL
Low level input voltage 0.5 V
|V
OS
| Output offset voltage 6 mV
I
CC
Supply current
V
CC
= 3V, V
SDB
= V
CC
6.0 8.0
mA
V
CC
= 5V, V
SDB
= V
CC
8.5 10.5
I
SD
Shutdown current V
SDB
= 0V 1 µA
ELECTRICAL CHARACTERISTICS
V
CC
= 3.6V, T
A
= 25°C (unless otherwise noted). (Note 2)
Symbol Parameter Condition Min. Typ. Max. Unit
V
OUT
Output voltage
f = 1kHz
THD+N = 10%
R
L
= 1μF+10Ω
V
CC
= 5.0V 7.8
V
RMS
V
CC
= 3.6V 5.6
V
CC
= 2.7V 4.3
THD+N
Total harmonic distortion plus
noise
R
L
= 1μF+10Ω,V
OUT
= 1kHz/2V
RMS
0.004
%
R
L
= 1μF+10Ω,V
OUT
= 1kHz/4V
RMS
0.014
V
NO
Noise output voltage 10 µV
RMS
f
OSC
Charge pump switching
frequency
320 kHz
t
ON
Start-up time from shutdown 450 µs
SNR Signal-to-noise ratio 100 dB
T
OVP
Thermal shutdown threshold 160 °C
T
HY
Thermal shutdown hysteresis 15 °C
Note 1: Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over other
temperature range, are guaranteed by design, characterization and process control.
Note 2: Guaranteed by design.
