BC558CZL1 Datasheet BC556B, BC557C, BC556BZL1 | P1-P3

September, 2005 − Rev. 2

1 Publication Order Number:

BC556B/D

BC556B, BC557A, B, C,

BC558B, C

Amplifier Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector - Emitter Voltage

BC556

BC557

BC558

V

CEO

−65

−45

−30

Vdc

Collector - Base Voltage

BC556

BC557

BC558

V

CBO

−80

−50

−30

Vdc

Emitter - Base Voltage V

EBO

−5.0 Vdc

Collector Current − Continuous

Collector Current − Peak

I

C

I

CM

−100

−200

mAdc

Base Current − Peak I

BM

−200 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance,

Junction−to−Case

R

q

JC

83.3 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

COLLECTOR

1

2

BASE

3

EMITTER

BC55x = Device Code

x = 6, 7, or 8

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

TO−92

CASE 29

STYLE 17

3

2

1

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

BC

55xx

AYWW G

G

MARKING DIAGRAM

BC556B, BC557A, B, C, BC558B, C

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= −2.0 mAdc, I

B

= 0) BC556

BC557

BC558

V

(BR)CEO

−65

−45

−30

−

V

Collector−Base Breakdown Voltage

(I

C

= −100 mAdc) BC556

BC557

BC558

V

(BR)CBO

−80

−50

−30

−

V

Emitter−Base Breakdown Voltage

(I

E

= −100 mAdc, I

C

= 0) BC556

BC557

BC558

V

(BR)EBO

−5.0

−

V

Collector−Emitter Leakage Current

(V

CES

= −40 V) BC556

(V

CES

= −20 V) BC557

BC558

(V

CES

= −20 V, T

A

= 125°C) BC556

BC557

BC558

I

CES

−

−2.0

−

−100

−4.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(I

C

= −10 mAdc, V

CE

= −5.0 V) A Series Device

B Series Devices

C Series Devices

(I

C

= −2.0 mAdc, V

CE

= −5.0 V) BC557

A Series Device

B Series Devices

C Series Devices

(I

C

= −100 mAdc, V

CE

= −5.0 V) A Series Device

B Series Devices

C Series Devices

h

FE

−

120

180

420

−

90

150

270

−

170

290

500

120

180

300

−

800

220

460

800

−

Collector−Emitter Saturation Voltage

(I

C

= −10 mAdc, I

B

= −0.5 mAdc)

(I

C

= −10 mAdc, I

B

= see Note 1)

(I

C

= −100 mAdc, I

B

= −5.0 mAdc)

V

CE(sat)

−

−0.075

−0.3

−0.25

−0.3

−0.6

−0.65

V

Base−Emitter Saturation Voltage

(I

C

= −10 mAdc, I

B

= −0.5 mAdc)

(I

C

= −100 mAdc, I

B

= −5.0 mAdc)

V

BE(sat)

−

−0.7

−1.0

−

V

Base−Emitter On Voltage

(I

C

= −2.0 mAdc, V

CE

= −5.0 Vdc)

(I

C

= −10 mAdc, V

CE

= −5.0 Vdc)

V

BE(on)

−0.55

−

−0.62

−0.7

−0.82

V

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= −10 mA, V

CE

= −5.0 V, f = 100 MHz) BC556

BC557

BC558

f

T

−

280

320

360

−

MHz

Output Capacitance

(V

CB

= −10 V, I

C

= 0, f = 1.0 MHz)

C

ob

− 3.0 6.0 pF

Noise Figure

(I

C

= −0.2 mAdc, V

CE

= −5.0 V, BC556

R

S

= 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC557

BC558

NF

−

2.0

10

dB

Small−Signal Current Gain

(I

C

= −2.0 mAdc, V

CE

= 5.0 V, f = 1.0 kHz) BC557

A Series Device

B Series Devices

C Series Devices

h

fe

125

240

450

−

900

260

500

900

−

1. I

C

= −10 mAdc on the constant base current characteristics, which yields the point I

C

= −11 mAdc, V

CE

= −1.0 V.

BC556B, BC557A, B, C, BC558B, C

http://onsemi.com

3

BC557/BC558

Figure 1. Normalized DC Current Gain

I

C

, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

I

C

, COLLECTOR CURRENT (mAdc)

−0.2

0.2

Figure 3. Collector Saturation Region

I

B

, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

I

C

, COLLECTOR CURRENT (mA)

−0.6

−0.7

−0.8

−0.9

−1.0

−0.5

0

−0.2

−0.4

−0.1

−0.3

1.6

1.2

2.0

2.8

2.4

−1.2

−1.6

−2.0

−0.02 −1.0

−10

0

−20

−0.1

−0.4

−0.8

h

FE

, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

VB

, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.7

0.5

0.3

−0.2

−10 −100

−1.0

T

A

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

CE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= −10 V

V

CE

= −10 V

T

A

= 25°C

−55°C to +125°C

I

C

= −100 mA

I

C

= −20 mA

−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1

−0.2 −0.5

−1.0

−2.0 −5.0

−10

−20 −50

−100

I

C

= −200 mAI

C

= −50 mAI

C

=

−10 mA

Figure 5. Capacitances

V

R

, REVERSE VOLTAGE (VOLTS)

10

Figure 6. Current−Gain − Bandwidth Product

I

C

, COLLECTOR CURRENT (mAdc)

−0.4

1.0

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

−0.5

C, CAPACITANCE (pF)

f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

T

A

= 25°C

C

ob

C

ib

−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40

150

−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50

V

CE

= −10 V

T

A

= 25°C

T

A

= 25°C

1.0

BC558CZL1

BC558CZL1

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