IRL3202PBF Datasheet IRL3202PBF | P1-P3

Parameter Max. Units

I

D

@ T

C

= 25°C Continuous Drain Current, V

GS

@ 4.5V 48

I

D

@ T

C

= 100°C Continuous Drain Current, V

GS

@ 4.5V 30 A

I

DM

Pulsed Drain Current  190

P

D

@T

C

= 25°C Power Dissipation 69 W

Linear Derating Factor 0.56 W/°C

V

GS

Gate-to-Source Voltage ± 10 V

V

GSM

Gate-to-Source Voltage 14 V

(Start Up Transient, tp = 100µs)

E

AS

Single Pulse Avalanche Energy 270 mJ

I

AR

Avalanche Current 29 A

E

AR

Repetitive Avalanche Energy 6.9 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

T

J

Operating Junction and -55 to + 150

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)

7/30/04

IRL3202PbF

HEXFET

®

Power MOSFET

PD -95659

These HEXFET Power MOSFETs were designed

specifically to meet the demands of CPU core DC-DC

converters in the PC environment. Advanced

processing techniques combined with an optimized

gate oxide design results in a die sized specifically to

offer maximum efficiency at minimum cost.

The TO-220 package is universally preferred for all

commercial-industrial applications at power

dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-

220 contribute to its wide acceptance throughout the

industry.

S

D

G

Absolute Maximum Ratings

Parameter Typ. Max. Units

R

θJC

Junction-to-Case  1.8

R

θCS

Case-to-Sink, Flat, Greased Surface 0.50  °C/W

R

θJA

Junction-to-Ambient  62

Thermal Resistance

V

DSS

= 20V

R

DS(on)

= 0.016Ω

I

D

= 48A

TO-220AB

Description

l Advanced Process Technology

l Optimized for 4.5V-7.0V Gate Drive

l Ideal for CPU Core DC-DC Converters

l Fast Switching

l Lead-Free

www.irf.com 1

IRL3202PbF

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 20   V V

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient  0.029  V/°C Reference to 25°C, I

D

= 1mA

  0.019 V

GS

= 4.5V, I

D

= 29A 

  0.016

Ω

V

GS

= 7.0V, I

D

= 29A 

V

GS(th)

Gate Threshold Voltage 0.70   V V

DS

= V

GS

, I

D

= 250µA

g

fs

Forward Transconductance 28   S V

DS

= 16V, I

D

= 29A

  25

µA

V

DS

= 20V, V

GS

= 0V

  250 V

DS

= 10V, V

GS

= 0V, T

J

= 150°C

Gate-to-Source Forward Leakage   100

nA

V

GS

= 10V

Gate-to-Source Reverse Leakage   -100 V

GS

= -10V

Q

g

Total Gate Charge   43 I

D

= 29A

Q

gs

Gate-to-Source Charge   12 nC V

DS

= 16V

Q

gd

Gate-to-Drain ("Miller") Charge   13 V

GS

= 4.5V, See Fig. 6 

t

d(on)

Turn-On Delay Time  9.8  V

DD

= 10V

t

r

Rise Time  100 

ns

I

D

= 29A

t

d(off)

Turn-Off Delay Time  63  R

G

= 9.5Ω, V

GS

= 4.5V

t

f

Fall Time  82  R

D

= 0.3Ω, 

Between lead,

6mm (0.25in.)

from package

and center of die contact

C

iss

Input Capacitance  2000  V

GS

= 0V

C

oss

Output Capacitance  800  pF V

DS

= 15V

C

rss

Reverse Transfer Capacitance  290   = 1.0MHz, See Fig. 5

S

D

G

 Repetitive rating; pulse width limited by

max. junction temperature.

 I

SD

≤ 29A, di/dt ≤ 63A/µs, V

DD

≤ V

(BR)DSS

,

T

J

≤ 150°C

Notes:

 Starting T

J

= 25°C, L = 0.64mH

R

G

= 25Ω, I

AS

= 29A.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

S

D

G

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

 

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode) 

 

p-n junction diode.

V

SD

Diode Forward Voltage   1.3 V T

J

= 25°C, I

S

= 29A, V

GS

= 0V 

t

rr

Reverse Recovery Time  68 100 ns T

J

= 25°C, I

F

= 29A

Q

rr

Reverse Recovery Charge  130 190 nC di/dt = 100A/µs



t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

)

Source-Drain Ratings and Characteristics

48

190

A

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

R

DS(on)

Static Drain-to-Source On-Resistance

I

GSS

nH

L

S

Internal Source Inductance  7.5 

L

D

Internal Drain Inductance  4.5 

I

DSS

Drain-to-Source Leakage Current

IRL3202PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J

°

TOP

BOTTOM

VGS

7.50V

5.00V

4.00V

3.50V

3.00V

2.50V

2.00V

1.75V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.0V

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

4.5V

48A

1

10

100

1000

2 3 4 5

V = 15V

20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J

°

T = 150 C

J

°

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J

°

TOP

BOTTOM

VGS

7.50V

5.00V

4.00V

3.50V

3.00V

2.50V

2.00V

1.75V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.0V

BOTTOM

IRL3202PBF

IRL3202PBF

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