IRG7PH35UPbF/IRG7PH35U-EP
2 www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
BR
CES
Collector-to-Emitter Breakdown Voltage 1200 — — V V
GE
= 0V, I
C
= 250μA
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage —1.2—V/°CV
GE
= 0V, I
C
= 1mA (25°C-150°C)
V
CE
on
Collector-to-Emitter Saturation Voltage — 1.9 2.2 V I
C
= 20A, V
GE
= 15V, T
J
= 25°C
—2.3— I
C
= 20A, V
GE
= 15V, T
J
= 150°C
—2.4— I
C
= 20A, V
GE
= 15V, T
J
= 175°C
V
GE
th
Gate Threshold Voltage 3.0 — 6.0 V V
CE
= V
GE
, I
C
= 600μA
ΔV
GE
th
/ΔTJ
Threshold Voltage temp. coefficient — -16 — mV/°C V
CE
= V
GE
, I
C
= 600μA (25°C - 150°C)
gfe Forward Transconductance — 22 — S V
CE
= 50V, I
C
= 20A, PW = 30μs
I
CES
Collector-to-Emitter Leakage Current — 2.0 100 μAV
GE
= 0V, V
CE
= 1200V
—2000— V
GE
= 0V, V
CE
= 1200V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
Total Gate Charge (turn-on) — 85 130 I
C
= 20A
Q
e
Gate-to-Emitter Charge (turn-on) — 15 20 nC V
GE
= 15V
Q
c
Gate-to-Collector Charge (turn-on) — 35 50 V
CC
= 600V
E
on
Turn-On Switching Loss — 1060 1300 I
C
= 20A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 620 850 μJR
G
= 10
Ω
, L = 200uH, L
S
= 150nH, T
J
= 25°C
E
total
Total Switching Loss — 1680 2150
Energy losses include tail & diode reverse recovery
t
d
on
Turn-On delay time — 30 50 Diode clamp the same as IRG7PH35UDPbF
t
r
Rise time — 15 30 ns
t
d
off
Turn-Off delay time — 160 180
t
f
Fall time — 80 105
E
on
Turn-On Switching Loss — 1880 — I
C
= 20A, V
CC
= 600V, V
GE
=15V
E
off
Turn-Off Switching Loss — 1140 — μJR
G
=10Ω, L=200uH, L
S
=150nH, T
J
= 175°C
E
total
Total Switching Loss — 3020 —
Energy losses include tail & diode reverse recovery
t
d
on
Turn-On delay time — 25 — Diode clamp the same as IRG7PH35UDPbF
t
r
Rise time — 20 — ns
t
d
off
Turn-Off delay time — 200 —
t
f
Fall time — 200 —
C
ies
Input Capacitance — 1940 — pF V
GE
= 0V
C
oes
Output Capacitance — 60 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 40 — f = 1.0Mhz
T
J
= 175°C, I
C
= 80A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 960V, Vp =1200V
Rg = 10
Ω
, V
GE
= +20V to 0V
Conditions
