SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
FEATURES
*60 Volt V
DS
*R
DS(on)
=14Ω
PARTMARKING DETAIL ML
COMPLEMENTARY TYPE ZVN3306F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-60 V
Continuous Drain Current at T
amb
=25°C I
D
-90 mA
Pulsed Drain Current I
DM
-1.6 A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-60 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5
-50
µA
µA
V
DS
=-60 V, V
GS
=0V
V
DS
=-48 V, V
GS
=0V, T=125°C(2)
On-State Drain Current(1) I
D(on)
-400 mA V
DS
=-18 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
14
Ω
V
GS
=-10V, I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
60 mS V
DS
=-18V, I
D
=-200mA
Input Capacitance (2) C
iss
50 pF
Common Source Output
Capacitance (2)
C
oss
25 pF V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
8pF
Turn-On Delay Time (2)(3) t
d(on)
8ns
V
DD
≈-18V, I
D
=-200mA
Rise Time (2)(3) t
r
8ns
Turn-Off Delay Time (2)(3) t
d(off)
8ns
Fall Time (2)(3) t
f
8ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50
Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
TYPICAL CHARACTERISTICS
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (°C)
Normal
i
sed R
an
d V
I 0.37A
Saturation Characteristics
On-resistance vs Drain Current
I Drain Current (mA)
RDS(on)-Drain Source On Resistance
Ω
-6V
-7V
-16V
-9V
V -10V
I -1mA
V V
-10V
V Drain Source
Voltage Saturation Characteristics
V
Gate Source Voltage
(Volts)
I
-400mA
-200mA
-100mA
V =-5V
-15V
-20V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
V =
I
-
Dr
ai
n
C
urr
ent (A
m
ps)
V - Drain Source
Voltage (Volts)
Q-Gate Charge (nC)
V -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Cap
acitance (pF)
Note:V 0V
f=1MHz
C
C
C
V
-
G
ate
Source V
ol
tag
e (
V
ol
ts)
Gate charge v gate-source voltage
V =
-20V
Note:I 0.2A
-40V -60V
ZVP3306F
S
SOT23
3 -4343 - 435
