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VEMI65AB-HCI-GS08

P1-P3P4-P6
VEMI65AB-HCI
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 08-Aug-12
1
Document Number: 81717
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6-Channel EMI-Filter with ESD-Protection
MARKING (example only)
Dot = pin 1 marking
YY = type code (see table below)
XX = date code
FEATURES
• Ultra compact LLP2513-13L package
• Low package profile of 0.6 mm
• 6-channel EMI-filter
• Low leakage current
• Line resistance R
S
= 100
• Typical cut off frequency f
3dB
= 130 MHz
• ESD-protection acc. IEC 61000-4-2
± 18 kV contact discharge
± 25 kV air discharge
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
21839
20378
12
11
10
13
9
8
7
1
2
3
4
5
6
YYXX
20720
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VEMI65AB-HCI VEMI65AB-HCI-GS08 3000 15 000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VEMI65AB-HCI LLP2513-13L 9S 5.5 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
All I/O pin to pin 13; acc. IEC 61000-4-5;
t
p
= 8/20 μs; single shot
I
PPM
4A
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 18
kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 25
Operating temperature Junction temperature T
J
- 40 to + 125 °C
Storage temperature T
STG
- 55 to + 150 °C
VEMI65AB-HCI
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 08-Aug-12
2
Document Number: 81717
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATION NOTE
With the VEMI65AB-HCI 6 different signal or data lines can be filtered and clamped to ground. Due to the different clamping
levels in forward and reverse direction the clamping behaviour is Bidirectional and Asymmetric (BiAs).
The 6 independent EMI-filter are placed between
pin 1 and pin 12,
pin 2 and pin 11,
pin 3 and pin 10,
pin 4 and pin 9,
pin 5 and pin 8 and
pin 6 and pin 7.
They all are connected to a common ground pin 13 on the backside of the package.
The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output to ground.
These Z-diodes are characterized by the breakthrough voltage level (V
BR
) and the diode capacitance (C
D
). Below the
breakthrough voltage level the Z-diodes can be considered as capacitors. Together with these capacitors and the line
resistance R
S
between input and output the device works as a low pass filter. Low frequency signals (f < f
3dB
) pass the filter
while high frequency signals (f > f
3dB
) will be shorted to ground through the diode capacitances C
D
.
Each filter is symmetrical so that both ports can be used as input or output.
L1
IN
L1
OUT
L3
IN
L3
OUT
L2
IN
L2
OUT
L4
IN
L4
OUT
L5
IN
L5
OUT
L6
IN
L6
OUT
20379
1
2
3
4
12
11
10
5
6
9
8
7
13
R
S
Out
(pin 7, 8, 9, 10, 11, 12)
In
(pin 1, 2, 3, 4, 5, 6)
GND
(pin 13)
C
D
20380
C
D
C
D
VEMI65AB-HCI
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 08-Aug-12
3
Document Number: 81717
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
ELECTRICAL CHARACTERISTICS All inputs (pin 1 to pin 6) to ground (pin 13)
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of channels which can be protected N
channel
- - 6 channel
Reverse stand off voltage Max. reverse working voltage V
RWM
--5V
Reverse voltage at I
R
= 1 μA V
R
5--V
Reverse current at V
R
= V
RWM
I
R
-0.251 μA
Reverse break down voltage at I
R
= 1 mA V
BR
6--V
Pos. clamping voltage
at I
PP
= 1 A applied at the input, measured
at the output; acc. IEC 61000-4-5
V
C-out
--7V
at I
PP
= I
PPM
= 4 A applied at the input,
measured at the output; acc. IEC 61000-4-5
V
C-out
--8V
Neg. clamping voltage
at I
PP
= - 1 A applied at the input, measured
at the output; acc. IEC 61000-4-5
V
C-out
- 1 - - V
at I
PP
= I
PPM
= - 4 A applied at the input,
measured at the output; acc. IEC 61000-4-5
V
C-out
- 1.2 - - V
Input capacitance
at V
R
= 0 V; f = 1 MHz C
IN
-4045pF
at V
R
= 2.5 V; f = 1 MHz C
IN
-2428pF
ESD-clamping voltage at ± 18 kV ESD-pulse acc. IEC 61000-4-2 V
CESD
-7.5- V
Line resistance
Measured between input and output;
I
S
= 10 mA
R
S
90 100 110
Cut-off frequency V
IN
= 0 V; measured in a 50 system f
3dB
- 130 - MHz
0 %
20 %
40 %
60 %
80 %
100 %
120 %
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
P1-P3P4-P6

VEMI65AB-HCI-GS08

Mfr. #:
Buy VEMI65AB-HCI-GS08
Manufacturer:
Vishay Semiconductors
Description:
EMI Filter Circuits 40 pF 40pF
Lifecycle:
New from this manufacturer.
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