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MRF9180R6

P1-P3P4-P6P7-P9P10-P11
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MRF9180R6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large- signal, common- source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 1400 mA
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 17 dB
Efficiency — 26%
Adjacent Channel Power -
750 kHz:
-45.0 dBc in 30 kHz BW
1.98 MHz: -60.0 dBc in 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +65 Vdc
Gate-Source Voltage V
GS
-0.5, +15 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
388
2.22
W
W/°C
Storage Temperature Range T
stg
-65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature T
J
200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R
θ
JC
0.45 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M1 (Minimum)
Document Number: MRF9180
Rev. 10, 5/2006
Freescale Semiconductor
Technical Data
MRF9180R6
880 MHz, 170 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved.
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2
RF Device Data
Freescale Semiconductor
MRF9180R6
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 300 µAdc)
V
GS(th)
2 2.9 4 Vdc
Gate Quiescent Voltage
(2)
(V
DS
= 26 Vdc, I
D
= 1400 mAdc)
V
GS(Q)
— 3.7 — Vdc
Drain-Source On-Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
— 0.19 0.5 Vdc
Forward Transconductance
(1)
(V
DS
= 10 Vdc, I
D
= 6 Adc)
g
fs
— 6 — S
Dynamic Characteristics
(1,3)
Output Capacitance
(V
DS
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
— 77 — pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 3.8 — pF
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system)
Two-T one Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
G
ps
16 17.5 — dB
Two-T one Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η 35 39 — %
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD — -31 -28 dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL — -15 -9 dB
Two-T one Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
G
ps
— 17.5 — dB
Two-T one Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
η — 38.5 — %
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IMD — -31 — dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IRL — -13 — dB
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.
3. Part internally input matched.
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MRF9180R6
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) (continued)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, CW, I
DQ
= 1400 mA,
f1 = 880.0 MHz)
P
1dB
— 170 — W
Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W CW, I
DQ
= 1400 mA,
f1 = 880.0 MHz)
G
ps
— 16.5 — dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W CW, I
DQ
= 1400 mA,
f1 = 880.0 MHz)
η — 55 — %
1. Measurement made with device in push-pull configuration.
P1-P3P4-P6P7-P9P10-P11

MRF9180R6

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Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors 170W 26V LDMOS NI1230
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