Product Standards
MOS FET
FC6946010R
FET1,FET2
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Turn-on and Turn-off test circuit
Page
Note) 1.
2.
Turn-off time
*1
toff
VDD = 3 V, VGS = 3 to 0 V
ID = 10 mA
pF
Output capacitance
pF
Turn-on time
*1
ton
VDD = 3 V, VGS = 0 to 3 V
100 ns
Electrical Characteristics Ta = 25C 3C
Forward transfer admittance |Yfs| ID = 10 mA, VDS = 3.0 V2060mS
2of6
Parameter Symbol Conditions Min Typ Max Unit
Drain-source breakdown voltage VDSS ID = 1 mA, VGS = 0 60 V
A
A
Drain-source cutoff current IDSS 1.0 VDS = 60 V, VGS = 0
Gate-source cutoff current IGSS
VGS =
10 V, VDS = 0
ID = 1.0
A, VDS = 3.0 V
0.9
10
1.5
12
V
815
Input capacitance Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
1.2
Drain-source ON resistance
RDS(on)1
ID = 10 mA, VGS = 2.5 V
Gate threshold voltage VTH
12
Coss
RDS(on)2
ID = 10 mA, VGS = 4.0 V 6
pF
Reverse transfer capacitance Crss 3
7
ID = 10 mA
ns100
