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M1MA141WKT1G

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 9
1 Publication Order Number:
M1MA141WKT1/D
M1MA141WKT1G,
M1MA142WKT1G,
SM1MA142WKT1G,
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC−70 package which is designed for low
power surface mount applications.
Features
Fast t
rr
, < 3.0 ns
Low C
D
, < 2.0 pF
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
A
= 25C)
Rating
Symbol Value Unit
Reverse Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
V
R
40
80
Vdc
Peak Reverse Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
V
RM
40
80
Vdc
Forward Current
Single
Dual
I
F
100
150
mAdc
Peak Forward Current
Single
Dual
I
FM
225
340
mAdc
Peak Forward Surge Current
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
I
FSM
(Note 1) 500
750
mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation P
D
150 mW
Junction Temperature T
J
150 C
Storage Temperature T
stg
−55 to
+ 150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 SEC
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SC−70 (SOT−323)
CASE 419
STYLE 5
MARKING DIAGRAM
Mx = Device Code
x = T for 141
U for 142
M = Date Code*
G =Pb−Free Package
CATHODE
3
12
ANODE
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Mx M G
G
M1MA142WKT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
M1MA141WKT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
SM1MA142WKT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G,
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
Characteristic
Condition Symbol Min Max Unit
Reverse Voltage Leakage Current
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
V
R
= 35 V
V
R
= 75 V
I
R
−
−
0.1
0.1
mAdc
Forward Voltage I
F
= 100 mA V
F
− 1.2 Vdc
Reverse Breakdown Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
I
R
= 100 mA
V
R
40
80
−
−
Vdc
Diode Capacitance V
R
= 0, f = 1.0 MHz C
D
− 2.0 pF
Reverse Recovery Time (Figure 1) I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100 W, I
rr
= 0.1 I
R
t
rr
(Note 2)
− 3.0 ns
2. t
rr
Test Circuit
M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G,
http://onsemi.com
3
A
R
L
t
r
t
p
t
10%
90%
V
R
t
p
= 2 ms
t
r
= 0.35 ns
I
F
t
rr
t
I
rr
= 0.1 I
R
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 1. Recovery Time Equivalent Test Circuit
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
0.68
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.64
0.6
0.56
0.52
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Reverse Current
Figure 4. Diode Capacitance
T
A
= -40C
T
A
= 25C
T
A
= 150C
T
A
= 125C
T
A
= 85C
T
A
= 55C
T
A
= 25C
I
R
, REVERSE CURRENT (A)
P1-P3P4-P4

M1MA141WKT1G

Mfr. #:
Buy M1MA141WKT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 40V 100mA
Lifecycle:
New from this manufacturer.
Delivery:
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