2001 May 07 3
NXP Semiconductors Product specification
Silicon PIN diode BAP65-05
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
forward voltage I
F
=50mA 0.9 1.1 V
I
R
reverse leakage current V
R
=20V 20 nA
C
d
diode capacitance V
R
=0V; f=1MHz 0.7 pF
V
R
= 1 V; f = 1 MHz 0.575 0.9 pF
V
R
= 3 V; f = 1 MHz 0.525 0.8 pF
V
R
=20V; f=1MHz 0.425 pF
r
D
diode forward resistance I
F
=1mA; f=100MHz 1
I
F
= 5 mA; f = 100 MHz; note 1 0.65 0.95
I
F
= 10 mA; f = 100 MHz; note 1 0.56 0.9
I
F
= 100 mA; f = 100 MHz 0.35
s
21
2
isolation V
R
= 0; f = 900 MHz 9.4 dB
V
R
= 0; f = 1800 MHz 4.8 dB
V
R
= 0; f = 2450 MHz 3.1 dB
s
21
2
insertion loss I
F
= 1 mA; f = 900 MHz 0.1 dB
I
F
= 1 mA; f = 1800 MHz 0.18 dB
I
F
= 1 mA; f = 2450 MHz 0.28 dB
s
21
2
insertion loss I
F
= 5 mA; f = 900 MHz 0.08 dB
I
F
= 5 mA; f = 1800 MHz 0.16 dB
I
F
= 5 mA; f = 2450 MHz 0.26 dB
s
21
2
insertion loss I
F
= 10 mA; f = 900 MHz 0.07 dB
I
F
= 10 mA; f = 1800 MHz 0.15 dB
I
F
= 10 mA; f = 2450 MHz 0.25 dB
s
21
2
insertion loss I
F
= 100 mA; f = 900 MHz 0.06 dB
I
F
= 100 mA; f = 1800 MHz 0.14 dB
I
F
= 100 mA; f = 2450 MHz 0.24 dB
L
charge carrier life time when switched from I
F
=10mA to
I
R
=6mA; R
L
=100;
measured at I
R
=3mA
0.17 s
L
S
series inductance I
F
= 100 mA; f = 100 MHz 1.4 nH
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 220 K/W
