RPI-576
Photointerrupter, General type
Applications
Printers
Facsimiles
AV equipment
Features
1) Heat resistance (170°C).
2) Small gap (0.5mm) and good accuracy.
3) Quick response time.
4) Filter against visible ray is built-in.
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Rev.A
Notes:
1. Unspecified tolerance
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
Cross-section A-A
Collector
Emitter
Anode
Cathode
Optical axis center
Gap
Through hole
A
A
R2.5
2-
φ0.7
4-φ1.0
2-φ0.8
10
2.54
5.2
8.95
2.6
2.35
0.9
0.8
0.5
13.7
5.85
5
2.5
7.5
10
3.5±0.4
4-0.4
(10)
0.7
4-0.45
(2.54)
14
13.6±0.1
4.65±0.1
0.4±0.1
5.6±0.1
6
576
Fig.1 Relative output vs. distance ( )
Fig.4 Relative output vs. distance ( )
RELATIVE COLLECTOR CURRENT : Ic (
%
)
DISTANCE : d (mm)
034512
100
80
60
40
20
0
d
FORWARD CURRENT : IF (mA)
AMBIENT TEMPERATURE : Ta (°C)
−20 0 20 40 60 80 100
10
40
30
20
0
FORWARD VOLTAGE : VF (V)
FORWARD CURRENT : IF (mA)
0
10
20
30
40
50
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8
75°C
50°C
25°C
0°C
25°C
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
Fig.2 Forward current falloff
Fig.9 Dark current vs. ambient
temperature
Fig.10 Output characteristics
Fig.11 Response time measurement circuit
td
tr
tf
10%
90%
RL
VCCInput
Input
Output
Output
td :
tr :
tf :
Delay time
Rise time (time for output current to rise
from 10% to 90% of peak current)
Fall time (time for output current to fall
from 90% to 10% of peak current)
Fig.7 Collector current vs. forward current
RELATIVE COLLECTOR CURRENT : Ic (
%
)
DISTANCE : d (mm)
034512
100
80
60
40
20
0
d
POWER DISSIPATION /
COLLECTOR POWER DISSIPATION : P
D
/ Pc (mW)
AMBIENT TEMPERATURE : Ta (°C)
200 20406080100
0
20
40
60
80
100
P
C
P
D
RELATIVE COLLECTOR CURRENT : Ic (
%
)
AMBIENT TEMPERATURE : Ta (°C)
40200 20406080100
0
20
40
60
80
100
120
160
140
Fig.8 Response time vs.
collector current
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(
V)
4861020
0
3.0
2.0
1.0
5mA
10mA
15mA
20mA
I
F
=25mA
RESPONSE TIME : t (µs)
COLLECTOR CURRENT : Ic (µA)
10 50 10020 500 1000200 2000
10
20
50
200
100
R
L
=5kΩ
R
L
=1kΩ
R
L
=2kΩ
t
r
t
f
t
r
t
f
t
f
t
r
DARK CURRENT : ID (nA)
AMBIENT TEMPERATURE : Ta (°C)
0 25 50 75 10025
1000
100
10
1
0.1
V
CE
=10V
V
CE
=30V
V
CE
=20V
COLLECTOR CURRENT : Ic (mA)
FORWARD CURRENT : IF (mA)
0 1020304050
0
1
2
3
4
5
Fig.3 Forward current vs. forward voltage
Fig.6 Relative output vs. ambient
temperature
Parameter
Cut-off frequency
∗ Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
Rise time
Fall time
Symbol
V
F
IR
ICEO
λ
P
λ
P
IC
fC
VCE(sat)
tr
tf
Min.
−
−
−
−
0.5
−
−
Typ.
1.3
−
−
800
−
0.1
10
Max.
1.6
10
0.5
−
−
0.5
−
Unit
VI
F=50mA
I
F=50mA
V
R=5V
V
CE=10V
−
V
CE=5V, IF=20mA
I
F=20mA, IC=0.5mA
V
CC=5V, IF=20mA, RL=100Ω
µA
µA
nm
mA
V
µs
− 10 −µs
−
1
−
MHz
− 950 − nm
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Infrared
light
emitter
diode
−
Maximum sensitivity wavelength
λ
P
−
800
−
nm
∗ This product is not designed to be protected against electromagnetic wave.
VCC=5V, IC=1mA, RL=100Ω
tr tf
Response time
−
10
−
µs
Photo
transistor
Parameter Symbol
I
C
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
−25 to +85
−40 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
V
mA
mW
°C
°C
Tsol 260 / 3 °C / s
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Soldering temperture
Input
(
LED
)
Output
photo-
transistor
(
)
∗
∗ 1mm from the body bottom.
