MUR420-E3
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-16
1
Document Number: 88685
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Note
(1)
Pulse test: t
p
= 300 μs pulse, duty cycle 2 %
PRIMARY CHARACTERISTICS
I
F(AV)
4.0 A
V
RRM
200 V
I
FSM
150 A
t
rr
25 ns
V
F
0.710 V
T
J
max. 175 °C
Package DO-201AD
Diode variations Single die
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage V
RRM
200
VWorking peak reverse voltage V
RWM
200
Maximum DC blocking voltage V
DC
200
Maximum average forward rectified current at T
A
= 80 °C (fig. 1) I
F(AV)
4.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load
I
FSM
150
Operating junction and storage temperature range T
J
, T
STG
-65 to +175 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous
forward voltage
3.0 A
T
J
= 150 °C
V
F
(1)
0.710
V
T
J
= 25 °C
0.875
4.0 A 0.890
Maximum instantaneous reverse current
at rated DC blocking voltage
T
J
= 25 °C
I
R
(1)
5.0
μA
T
J
= 150 °C 150
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
t
rr
25
ns
I
F
= 1.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 10 % I
RM
35
Maximum forward recovery time
I
F
= 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
t
fr
25
