Data Sheet ADG658/ADG659
Rev. D | Page 5 of 20
5 V SINGLE SUPPLY
V
DD
= 5 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 2.
B Version Y Version
Parameter +25°C
−40°C
to +85°C
−40°C
to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V V
DD
= 4.5 V, V
SS
= 0 V
On Resistance (R
ON
) 85 Ω typ V
S
= 0 V to 4.5 V, I
S
= 1 mA; see Figure 21
150 160 200 Ω max
On Resistance Match between 4.5 Ω typ V
S
= 3.5 V, I
S
= 1 mA
Channels (∆R
ON
) 8 9 10 Ω max
On Resistance Flatness (R
FL AT(ON)
) 13 14 16 Ω typ V
DD
= 5 V, V
SS
= 0 V, V
S
= 1.5 V to 4 V, I
S
= 1 mA
LEAKAGE CURRENTS V
DD
= 5.5 V
Source OFF Leakage I
S
(OFF) ±0.005 nA typ V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V; see Figure 22
±0.2 ±5 nA max
Drain OFF Leakage I
D
(OFF) ±0.005 nA typ V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V; see Figure 23
ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max
Channel ON Leakage I
D
, I
S
(ON) ±0.005 nA typ V
S
= V
D
= 1 V or 4.5 V, see Figure 24
ADG658 ±0.2 ±5 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
INL
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±1 µA max
C
IN
, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
1
t
TRANSITION
120 ns typ R
L
= 300 Ω, C
L
= 35 pF
200 270 300 ns max V
S
= 3 V; see Figure 25
t
ON
(
EN
) 120 ns typ R
L
= 300 Ω, C
L
= 35 pF
190 245 280 ns max V
S
= 3 V; see Figure 27
t
OFF
(
EN
) 35 ns typ R
L
= 300 Ω, C
L
= 35 pF
50 60 70 ns max V
S
= 3 V; see Figure 27
Break-Before-Make Time Delay, t
BBM
100 ns typ R
L
= 300 Ω, C
L
= 35 pF
10 ns min V
S1
= V
S2
= 3 V; see Figure 26
S
S
L
1 pC max
Off Isolation −90 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 29
Channel-to-Channel Crosstalk −90 dB typ R
L
= 50 Ω, C
L
= 5 pF; f = 1 MHz; see Figure 31
(ADG659)
−3 dB Bandwidth
ADG658 180 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 30
ADG659 330 MHz typ
C
S
(OFF) 5 pF typ f = 1 MHz
C
D
(OFF)
ADG658 29 pF typ f = 1 MHz
ADG659 15 pF typ f = 1 MHz
