ADG659YRQ Datasheet ADG658YRUZ, ADG659YRUZ, ADG659YRUZ-REEL7 | P7-P9

Data Sheet ADG658/ADG659

Rev. D | Page 7 of 20

2.7 V TO 3.6 V SINGLE SUPPLY

V

DD

= 2.7 to 3.6 V, V

SS

= 0 V, GND = 0 V, unless otherwise noted.

Table 3.

B Version Y Version

Parameter +25°C

−40°C

to +85°C

−40°C

to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 to V

DD

V V

DD

= 2.7 V, V

SS

= 0 V

On Resistance (R

ON

) 185 Ω typ V

S

= 0 V to 2.7 V, I

S

= 0.1 mA; see Figure 21

300 350 400 Ω max

On Resistance Match between 2 Ω typ V

S

= 1.5 V, I

S

= 0.1 mA

Channels (∆R

ON

) 4.5 6 7 Ω max

LEAKAGE CURRENTS V

DD

= 3.3 V

Source OFF Leakage I

S

(OFF) ±0.005 nA typ V

S

= 1 V/3 V, V

D

= 3 V/1 V; see Figure 22

±0.2 ±5 nA max

Drain OFF Leakage I

D

(OFF) ±0.005 nA typ V

S

= 1 V/3 V, V

D

= 3 V/1 V; see Figure 23

ADG658 ±0.2 ±5 nA max

ADG659 ±0.1 ±2.5 nA max

Channel ON Leakage I

D

, I

S

(ON) ±0.005 nA typ V

S

= V

D

= 1 V or 3 V, see Figure 24

ADG658 ±0.2 ±5 nA max

ADG659 ±0.1 ±2.5 nA max

DIGITAL INPUTS

Input High Voltage, V

INH

2.0 V min

Input Low Voltage, V

INL

0.5 V max

Input Current

I

INL

or I

INH

0.005 µA typ V

IN

= V

INL

or V

INH

±1 µA max

C

IN

, Digital Input Capacitance 2 pF typ

DYNAMIC CHARACTERISTICS

1

t

TRANSITION

200 ns typ R

L

= 300 Ω, C

L

= 35 pF

370 440 490 ns max V

S

= 1.5 V; see Figure 25

t

ON

(

EN

) 230 ns typ R

L

= 300 Ω, C

L

= 35 pF

370

440

490

ns max

V

S

= 1.5 V; see Figure 27

t

OFF

(

EN

) 50 ns typ R

L

= 300 Ω, C

L

= 35 pF

80 90 110 ns max V

S

= 1.5 V; see Figure 27

Break-Before-Make Time Delay, t

BBM

200 ns typ R

L

= 300 Ω, C

L

= 35 pF

10 ns min V

S1

= V

S2

= 1.5 V; see Figure 26

Charge Injection 1 pC typ V

S

= 1.5 V, R

S

= 0 Ω, C

L

= 1 nF; see Figure 28

2

pC max

Off Isolation −90 dB typ R

L

= 50 Ω, C

L

= 5 pF, f = 1 MHz; see Figure 29

Channel-to-Channel Crosstalk −90 dB typ R

L

= 50 Ω, C

L

= 5 pF; f = 1 MHz; see Figure 31

(ADG659)

−3 dB Bandwidth

ADG658 160 MHz typ R

L

= 50 Ω, C

L

= 5 pF; see Figure 30

ADG659 300 MHz typ

C

S

(OFF) 5 pF typ f = 1 MHz

C

D

(OFF)

ADG658 29 pF typ f = 1 MHz

ADG659 15 pF typ f = 1 MHz

ADG658/ADG659 Data Sheet

Rev. D | Page 8 of 20

B Version Y Version

Parameter +25°C

−40°C

to +85°C

−40°C

to +125°C Unit Test Conditions/Comments

C

D

, C

S

(ON)

ADG658 30 pF typ f = 1 MHz

ADG659 16 pF typ f = 1 MHz

POWER REQUIREMENTS V

DD

= 3.6 V

I

DD

0.01 µA typ Digital Inputs = 0 V or 3.6 V

1 µA max

1

Guaranteed by design; not subject to production test.

Data Sheet ADG658/ADG659

Rev. D | Page 9 of 20

ABSOLUTE MAXIMUM RATINGS

T

A

= 25°C, unless otherwise noted.

Table 4.

Parameter Rating

V

DD

to V

SS

13 V

V

DD

to GND −0.3 V to +13 V

V

SS

to GND +0.3 V to −6.5 V

Analog Inputs

1

V

SS

− 0.3 V to V

DD

+ 0.3 V

Digital Inputs

1

GND − 0.3 V to V

DD

+ 0.3 V

or 10 mA, whichever

occurs first

Peak Current, S or D 40 mA

(Pulsed at 1 ms, 10% duty cycle max)

Continuous Current, S or D 20 mA

Operating Temperature Range

Automotive (Y Version) −40°C to +125°C

Industrial (B Version) −40°C to +85°C

Storage Temperature Range −65°C to +150°C

Junction Temperature 150°C

θ

JA

Thermal Impedance

16-Lead QSOP 104°C/W

16-Lead TSSOP 150.4°C/W

16-Lead LFCSP (4-Layer Board) 70°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) 215°C

Infrared (15 sec) 220°C

ESD 5.5 kV

1

Over voltages at A

X

,

EN

, S, or D are clamped by internal diodes. Current must

be limited to the maximum ratings.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

ESD CAUTION

ADG659YRQ

ADG659YRQ

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