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MMBF2202PT1G

P1-P3P4-P4
Publication Order Number:
MMBF2202PT1/D
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 6
1
MMBF2202PT1
Preferred Device
Power MOSFET
300 mAmps, 20 Volts
P-Channel SC-70/SOT-323
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc-dc converters, power management in portable and
battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
•Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
•Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space
•AEC Qualified
•PPAP Capable
•Pb-Free Package is Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain-to-Source Voltage V
DSS
20 Vdc
Gate-to-Source Voltage - Continuous V
GS
±20 Vdc
Drain Current
- Continuous @ T
A
= 25°C
- Continuous @ T
A
= 70°C
- Pulsed Drain Current (t
p
≤ 10 ms)
I
D
I
D
I
DM
300
240
750
mAdc
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
P
D
150
1.2
mW
mW/°C
Operating and Storage
Temperature Range
T
J
, T
stg
-55 to 150 °C
Thermal Resistance, Junction-to-Ambient
R
q
JA
833 °C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
3
1
2
P-Channel
2
1
300 mAMPS, 20 VOLTS
R
DS(on)
= 2.2 W
Device Package Shipping
†
ORDERING INFORMATION
MMBF2202PT1 SC-70/
SOT-323
3000 Tape & Reel
SC-70/SOT-323
CASE 419
STYLE 8
MARKING DIAGRAM
AND PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
3
http://onsemi.com
P3 = Specific Device Code
M = Date Code*
G = Pb-Free Package
1
3
Source
Gate
Drain
2
P3 MG
G
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
MMBF2202PT1G SC-70/
SOT-323
(Pb-Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBF2202PT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10 mA)
V
(BR)DSS
20 - - Vdc
Zero Gate Voltage Drain Current
(V
DS
= 16 Vdc, V
GS
= 0 Vdc)
(V
DS
= 16 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
-
-
-
-
1.0
10
mAdc
Gate-Body Leakage Current (V
GS
= ±20 Vdc, V
DS
= 0) I
GSS
- - ±100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
V
GS(th)
1.0 1.7 2.4 Vdc
Static Drain-to-Source On-Resistance
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
(V
GS
= 4.5 Vdc, I
D
= 50 mAdc)
r
DS(on)
-
-
1.5
2.0
2.2
3.5
W
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 200 mAdc) g
FS
- 600 - mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance (V
DS
= 5.0 V) C
iss
- 50 - pF
Output Capacitance (V
DS
= 5.0 V) C
oss
- 45 -
Transfer Capacitance (V
DG
= 5.0 V) C
rss
- 20 -
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
(V
DD
= -15 Vdc,
R
L
= 75 W, I
D
= 200 mAdc,
V
GEN
= -10 V, R
G
= 6.0 W)
t
d(on)
- 2.5 -
ns
Rise Time t
r
- 1.0 -
Turn-Off Delay Time t
d(off)
- 16 -
Fall Time t
f
- 8.0 -
Gate Charge (See Figure 5) (V
DS
= 16 V, V
GS
= 10 V,
I
D
= 200 mA)
Q
T
- 2700 - pC
SOURCE-DRAIN DIODE CHARACTERISTICS
Continuous Current I
S
- - 0.3 A
Pulsed Current I
SM
- - 0.75
Forward Voltage (Note 3) V
SD
- 1.5 - V
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
Figure 1. On Resistance versus Gate-Source Voltage
10
0
V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
I
D
= 200 mA8
6
4
2
0
1 234 56 78 910
r
DS(on)
, ON RESISTANCE (OHMS)
Figure 2. On Resistance versus Temperature
4.0
-40
TEMPERATURE (°C)
V
GS
= 10 V
I
D
= 200 mA
3.5
3.0
2.5
2.0
0
-20 0 20 40 60 80 100 120 140 160
r
DS(on)
, ON RESISTANCE (OHMS)
1.5
1.0
0.5
V
GS
= 4.5 V
I
D
= 50 mA
MMBF2202PT1
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. On Resistance versus Drain Current
6
0
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
5
4
3
2
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
R
DS(on)
, ON RESISTANCE (OHMS)
1
V
GS
= 4.5 V
Figure 4. Transfer Characteristics
1.0
0
V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
, DRAIN CURRENT (AMPS)
0.5
0.4
0.3
25
Figure 5. Source-Drain Forward Voltage
1
V
SD
, SOURCE-DRAIN FORWARD VOLTAGE (VOLTS)
0.1
0.01
0.001
0 0.5 1.0 1.5 2.0 2.5
I
S
, SOURCE CURRENT (AMPS)
Figure 6. On Region Characteristics
0.8
0
V
DS
, DRAIN-SOURCE VOLTAGE (VOLTS)
V
GS
= 5 V
0.7
0.6
0.5
0.4
0
1 2345678910
I
D(on)
, DRAIN CURRENT (AMPS)
0.3
0.2
0.1
V
GS
= 4.5 V
Figure 7. Capacitance Variation
50
0
V
DS
, DRAIN-SOURCE VOLTAGE (VOLTS)
45
40
35
30
0
2 4 6 8 10 12 14 16 18 20
C, CAPACITANCE (pF)
25
20
15
0.2
0.1
5.5 6.0
-55
150
25°
150°
V
GS
= 3.5 V
V
GS
= 4 V
V
GS
= 3 V
10
5
C
iss
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
P1-P3P4-P4

MMBF2202PT1G

Mfr. #:
Buy MMBF2202PT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 300mA P-Channel
Lifecycle:
New from this manufacturer.
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