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IRFR120ZTRLPBF

P1-P3P4-P6P7-P9P10-P11
IRFR120ZPbF
IRFU120ZPbF
HEXFET
®
Power MOSFET
V
DSS
= 100V
R
DS(on)
= 190mΩ
I
D
= 8.7A
09/16/10
www.irf.com 1
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
D-Pak
IRFR120ZPbF
I-Pak
IRFU120ZPbF
HEXFET
®
is a registered trademark of International Rectifier.
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
P
u
l
se
d D
ra
i
n
C
urrent
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
mJ
E
AS
(Tested )
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy T
este
d V
a
l
ue
I
AR
A
va
l
anc
h
e
C
urrent
A
E
AR
R
epet
i
t
i
ve
A
va
l
anc
h
e
E
ner
gy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 4.28
R
θ
JA
J
unct
i
on-to-
A
m
bi
ent
(PCB
mount
)
––– 40 °C/W
R
θ
JA
Junction-to-Ambient ––– 110
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N m)
35
0.23
± 20
Max.
8.7
6.1
35
20
18
See Fig.12a, 12b, 15, 16
PD - 95772B
IRFR/U120ZPbF
2 www.irf.com
S
D
G
El
ec
t
r
i
ca
l Ch
arac
t
er
i
s
ti
cs
@ T
J
=
un
ess
o
erw
se
spec
e
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e 100 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Volta
g
e Temp. Coefficient ––– 0.084 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 150 190
m
Ω
V
GS(th)
Gate Threshold Volta
g
e 2.0 ––– 4.0 V
g
fs Forward Transconductance 16 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20
µ
A
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
g
e ––– ––– -200
Q
g
Total Gate Char
g
e–––6.910
Q
gs
Gate-to-Source Char
g
e ––– 1.6 ––– nC
Q
gd
Gate-to-Drain ("Miller") Char
g
e ––– 3.1 –––
t
d(on)
Turn-On Dela
y
Time ––– 8.3 –––
t
r
Rise Time –––26–––
t
d(off)
Turn-Off Dela
y
Time –––27–––ns
t
f
Fall Time –––23–––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 310 –––
C
oss
Output Capacitance ––– 41 –––
C
rss
Reverse Transfer Capacitance ––– 24 ––– pF
C
oss
Output Capacitance ––– 150 –––
C
oss
Output Capacitance ––– 26 –––
C
oss
eff.
Effective Output Capacitance ––– 57 –––
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 8.7
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 35
(Body Diode)
V
SD
Diode Forward Volta
g
e ––– ––– 1.3 V
t
rr
Reverse Recover
y
Time –––2436ns
Q
rr
Reverse Recover
y
Char
g
e ––– 23 35 nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 5.2A
R
G
= 53 Ω
T
J
= 25°C, I
S
= 5.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.2A, V
DD
= 50V
di/dt = 100A/
µ
s
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.2A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= 25V, I
D
= 5.2A
I
D
= 5.2A
V
DS
= 80V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 20V
V
GS
= -20V
IRFR/U120ZPbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
0 1 10 100
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 25°C
4.5V
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0 1 10 100
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 175°C
4.5V
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.0 5.0 6.0 7.0 8.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 25V
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
02468
I
D,
Drain-to-Source Current (A)
0
2
4
6
8
10
12
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 10V
380µs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P11

IRFR120ZTRLPBF

Mfr. #:
Buy IRFR120ZTRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 100V 8.7A 190mOhm 6.9nC Qg
Lifecycle:
New from this manufacturer.
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