I
NTEGRATED
C
IRCUITS
D
IVISION
IXD_602
4 www.ixysic.com R06
1.5 Electrical Characteristics: T
A
= 25°C
Test Conditions: 4.5V <
V
CC
< 35V, one channel (unless otherwise noted).
1.6 Electrical Characteristics: T
A
= - 40°C to +125°C
Test Conditions: 4.5V <
V
CC
< 35V, one channel (unless otherwise noted).
Parameter Conditions Symbol Minimum Typical Maximum Units
Input Voltage, High
4.5V <
V
CC
< 18V
V
IH
3.0 - -
V
Input Voltage, Low
4.5V <
V
CC
< 18V
V
IL
--0.8
Input Current
0V <
V
IN
< V
CC
I
IN
--±10A
Output Voltage, High - V
OH
V
CC
-0.025
--
V
Output Voltage, Low - V
OL
- - 0.025
Output Resistance, High State
V
CC
=18V, I
OUT
=-10mA
R
OH
-2.54
Output Resistance, Low State
V
CC
=18V, I
OUT
=10mA
R
OL
-1.53
Output Current, Continuous
Limited by package power
dissipation
I
DC
--±1A
Rise Time
V
CC
=18V, C
LOAD
=1000pF
t
r
-7.515
ns
Fall Time
V
CC
=18V, C
LOAD
=1000pF
t
f
-6.515
On-Time Propagation Delay
V
CC
=18V, C
LOAD
=1000pF
t
ondly
-3560
Off-Time Propagation Delay
V
CC
=18V, C
LOAD
=1000pF
t
offdly
-3860
Power Supply Current
V
CC
=18V, V
IN
=3.5V
I
CC
-13mA
V
CC
=18V, V
IN
=0V
-<110
A
V
CC
=18V, V
IN
=V
CC
-<110
Parameter Conditions Symbol Minimum Maximum Units
Input Voltage, High
4.5V <
V
CC
< 18V
V
IH
3.3 -
V
Input Voltage, Low
4.5V <
V
CC
< 18V
V
IL
-0.65
Input Current
0V <
V
IN
< V
CC
I
IN
-10 10 A
Output Voltage, High - V
OH
V
CC
-0.025
-
V
Output Voltage, Low - V
OL
- 0.025
Output Resistance, High State
V
CC
=18V, I
OUT
=-10mA
R
OH
-6
Output Resistance, Low State
V
CC
=18V, I
OUT
=10mA
R
OL
-5
Output Current, Continuous
Limited by package power
dissipation
I
DC
1A
Rise Time
V
CC
=18V, C
LOAD
=1000pF
t
r
-18
ns
Fall Time
V
CC
=18V, C
LOAD
=1000pF
t
f
-18
On-Time Propagation Delay
V
CC
=18V, C
LOAD
=1000pF
t
ondly
-75
Off-Time Propagation Delay
V
CC
=18V, C
LOAD
=1000pF
t
offdly
-75
Power Supply Current
V
CC
=18V, V
IN
=3.5V
I
CC
-3.5mA
V
CC
=18V, V
IN
=0V
-150
A
V
CC
=18V, V
IN
=V
CC
-150
I
NTEGRATED
C
IRCUITS
D
IVISION
IXD_602
R06 www.ixysic.com 5
1.7 Thermal Characteristics
2 IXD_602 Performance
2.1 Timing Diagrams
2.2 Characteristics Test Diagram
Package Parameter Symbol Rating Units
IXDD602D2 (8-Pin DFN)
Thermal Resistance, Junction-to-Ambient
JA
35
°C/W
IXD_602PI (8-Pin DIP)
125
IXD_602SI (8-Pin Power SOIC)
85
IXD_602SIA (8-Pin SOIC)
120
IXD_602SI (8-Pin Power SOIC) Thermal Resistance, Junction-to-Case
JC
10
°C/W
10%
90%
t
ondly
t
offdly
t
r
t
f
V
IH
V
IL
INx
OUTx
10%
90%
t
ondly
t
offdly
t
f
t
r
V
IH
V
IL
INx
OUTx
INA
OUTA
GND
V
CC
INB
V
CC
+
-
V
IN
0.1μF10μF
OUTB
C
LOAD
Tektronix
Current Probe
6302
Tektronix
Current Probe
6302
C
LOAD
I
NTEGRATED
C
IRCUITS
D
IVISION
IXD_602
6 www.ixysic.com R06
3 Block Diagrams & Truth Tables
3.1 IXDI602
3.2 IXDF602
3.3 IXDN602
IN
X
OUT
X
0
1
1
0
INA OUTA
0
1
1
0
INB
OUTB
0
0
1
1
INA
GND
INB
OUTA
V
CC
OUTB
V
CC
INA
GND
INB
OUTA
V
CC
OUTB
V
CC
IN
X
OUT
X
0
0
1
1
INA
GND
INB
OUTA
V
CC
OUTB
V
CC

IXDN602SI

Mfr. #:
Manufacturer:
IXYS Integrated Circuits
Description:
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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