6.2 NVM specifications
This section provides details about program/erase times and program/erase endurance for
the flash and EEPROM memories.
Table 11. Flash characteristics
C Characteristic Symbol Min
1
Typical
2
Max
3
Unit
4
D Supply voltage for program/erase in the
operating temperature range
V
prog/erase
2.7 — 5.5 V
D Supply voltage for read operation V
Read
2.7 — 5.5 V
D NVM Bus frequency f
NVMBUS
1 — 25 MHz
D NVM Operating frequency f
NVMOP
0.8 1 1.05 MHz
D Erase Verify All Blocks t
VFYALL
— — 17338 t
cyc
D Erase Verify Flash Block t
RD1BLK
— — 16913 t
cyc
D Erase Verify EEPROM Block t
RD1BLK
— — 810 t
cyc
D Erase Verify Flash Section t
RD1SEC
— — 484 t
cyc
D Erase Verify EEPROM Section t
DRD1SEC
— — 555 t
cyc
D Read Once t
RDONCE
— — 450 t
cyc
D Program Flash (2 word) t
PGM2
0.12 0.12 0.29 ms
D Program Flash (4 word) t
PGM4
0.20 0.21 0.46 ms
D Program Once t
PGMONCE
0.20 0.21 0.21 ms
D Program EEPROM (1 Byte) t
DPGM1
0.10 0.10 0.27 ms
D Program EEPROM (2 Byte) t
DPGM2
0.17 0.18 0.43 ms
D Program EEPROM (3 Byte) t
DPGM3
0.25 0.26 0.60 ms
D Program EEPROM (4 Byte) t
DPGM4
0.32 0.33 0.77 ms
D Erase All Blocks t
ERSALL
96.01 100.78 101.49 ms
D Erase Flash Block t
ERSBLK
95.98 100.75 101.44 ms
D Erase Flash Sector t
ERSPG
19.10 20.05 20.08 ms
D Erase EEPROM Sector t
DERSPG
4.81 5.05 20.57 ms
D Unsecure Flash t
UNSECU
96.01 100.78 101.48 ms
D Verify Backdoor Access Key t
VFYKEY
— — 464 t
cyc
D Set User Margin Level t
MLOADU
— — 407 t
cyc
C FLASH Program/erase endurance T
L
to
T
H
in the operating temperature range
n
FLPE
10 k 100 k — Cycles
C EEPROM Program/erase endurance TL
to TH in the operating temperature
range
n
FLPE
50 k 500 k — Cycles
C Data retention at an average junction
temperature of T
Javg
= 85°C after up to
10,000 program/erase cycles
t
D_ret
15 100 — years
1. Minimum times are based on maximum f
NVMOP
and maximum f
NVMBUS
2. Typical times are based on typical f
NVMOP
and maximum f
NVMBUS
3. Maximum times are based on typical f
NVMOP
and typical f
NVMBUS
plus aging
4. t
cyc
= 1 / f
NVMBUS
Peripheral operating requirements and behaviors
MC9S08PA4 Data Sheet, Rev. 8, 08/2018
NXP Semiconductors 21