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FFSH10120A-F085
P1-P3
P4-P6
P7-P8
FFSH10120A
−
F085
www
.onsemi.com
4
TYPICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Figure 7. Capacitance vs. Reverse V
oltage
Figure 8. Capacitance Stored Energy
Figure 9. Junction-to-Case T
ransient Thermal Response Curve
0.1
10
100
1000
5000
CAPACITANCE (pF)
V
R
, REVERESE VOLTAGE (V)
1
10
100
1000
0
0
10
20
30
E
C
, CAPACITIVE ENERGY (
m
J)
V
R
, REVERVE VOLTAGE (V)
200
400
600
800
1000
10
−
6
10
−
5
10
−
4
10
−
3
10
−
2
10
−
1
1
10
−
4
10
−
3
10
−
2
10
−
1
1
DUTY CIRCLE
−
DESCENDING ORDER
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
2
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
P
DM
t
1
t
2
q
JC
(t) = r(t) x R
q
JC
R
q
JC
= 0.78
o
C/W
Duty Cycle, D = t
1
/ t
2
Peak T
J
= P
DM
x Z
q
JC
(t) + T
C
Z
NOTES:
FFSH10120A
−
F085
www
.onsemi.com
5
TEST CIRCUIT AND W
A
VEFORMS
Figure 10. Unclamped Inductive Switching T
est Circuit & Waveform
LR
+
−
DUT
CURRENT
SENSE
V
DD
V
DD
Q1
IV
V
AV
L
t
t
0
t
1
t
2
I
L
I
L
L = 0.5 mH
R < 0.1
W
V
DD
= 50 V
EA
VL = 1/2LI2 [V
R(A
VL)
/ (V
R(A
VL)
−
V
DD
)]
Q1 = IGBT (BV
CES
> DUT V
R(A
VL)
)
TO−247−2LD
CASE 340CL
ISSUE O
DA
TE 31 OCT 201
6
MECHANICAL CASE OUTLINE
P
ACKAGE DIMENSIONS
http://onsemi.com
1
©
Semiconductor Components Industries, LLC, 2002
October
, 2002 − Rev
. 0
Case Outline Number:
XXX
DOCUMENT NUMBER:
ST
A
TUS:
NEW ST
ANDARD:
DESCRIPTION:
98AON13850G
ON SEMICONDUCTOR ST
ANDARD
TO−247−2LD
Electronic
versions
are
uncontrolled except
when
accessed
directly
from
the Document
Repository
.
Printed
versions
are
uncontrolled except
when
stamped
“CONTROLLED
COPY” in
red.
P
AGE
1 OF 2
P1-P3
P4-P6
P7-P8
FFSH10120A-F085
Mfr. #:
Buy FFSH10120A-F085
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1200V 10A AUTO SIC SBD
Lifecycle:
New from this manufacturer.
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FFSH10120A-F085