OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PTVS14VS1UR,115

P1-P3P4-P6P7-P9P10-P12P13-P13
PTVSxS1UR_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 10 January 2011 3 of 12
NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
5. Limiting values
[1] In accordance with IEC 61643-321 (10/1000 μs current waveform).
[2] For PTVS3V3S1UR: P
PPM
=350W
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
[2] Soldering point of cathode tab.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PPM
rated peak pulse power
[1][2]
-400W
I
PPM
rated peak pulse current
[1]
-see
Table 9
and 10
I
FSM
Non-repetitive peak
forward current
single half-sine
wave; t
p
=8.3ms
-50A
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
V
ESD
electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2]
-30kV
Table 7. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
PTVSxS1UR_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 10 January 2011 4 of 12
NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
6. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[4] Soldering point of cathode tab.
7. Characteristics
Table 8. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--220K/W
[2]
--130K/W
[3]
--70K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[4]
--18K/W
Table 9. Characteristics per type; PTVS3V3S1UR to PTVS7V0S1UR
T
j
=25
°
C unless otherwise specified.
Type number Reverse standoff
voltage
V
RWM
(V)
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
Clamping voltage
V
CL
(V)
I
R
=10mA at V
RWM
(V)
Max Min Typ Max Typ Max Max I
PPM
(A)
PTVS3V3S1UR 3.3 5.20 5.60 6.00 5 600 8.0 43.8
PTVS5V0S1UR 5.0 6.40 6.70 7.00 5 400 9.2 43.5
PTVS6V0S1UR 6.0 6.67 7.02 7.37 5 400 10.3 38.8
PTVS6V5S1UR 6.5 7.22 7.60 7.98 5 250 11.2 35.7
PTVS7V0S1UR 7.0 7.78 8.20 8.60 3 100 12.0 33.3
Table 10. Characteristics per type; PTVS7V5S1UR to PTVS64VS1UR
T
j
=25
°
C unless otherwise specified.
Type number Reverse standoff
voltage
V
RWM
(V)
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
Clamping voltage
V
CL
(V)
I
R
=1mA at V
RWM
(V)
Max Min Typ Max Typ Max Max I
PPM
(A)
PTVS7V5S1UR 7.5 8.33 8.77 9.21 0.2 50 12.9 31.0
PTVS8V0S1UR 8.0 8.89 9.36 9.83 0.03 25 13.6 29.4
PTVS8V5S1UR 8.5 9.44 9.92 10.40 0.01 10 14.4 27.8
PTVS9V0S1UR 9.0 10.00 10.55 11.10 0.005 5 15.4 26.0
PTVS10VS1UR 10 11.10 11.70 12.30 0.005 2.5 17.0 23.5
PTVS11VS1UR 11 12.20 12.85 13.50 0.005 2.5 18.2 22.0
PTVS12VS1UR 12 13.30 14.00 14.70 0.005 2.5 19.9 20.1
PTVS13VS1UR 13 14.40 15.15 15.90 0.001 0.1 21.5 18.6
PTVSxS1UR_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 10 January 2011 5 of 12
NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
PTVS14VS1UR 14 15.60 16.40 17.20 0.001 0.1 23.2 17.2
PTVS15VS1UR 15 16.70 17.60 18.50 0.001 0.1 24.4 16.4
PTVS16VS1UR 16 17.80 18.75 19.70 0.001 0.1 26.0 15.4
PTVS17VS1UR 17 18.90 19.90 20.90 0.001 0.1 27.6 14.5
PTVS18VS1UR 18 20.00 21.00 22.10 0.001 0.1 29.2 13.7
PTVS20VS1UR 20 22.20 23.35 24.50 0.001 0.1 32.4 12.3
PTVS22VS1UR 22 24.40 25.60 26.90 0.001 0.1 35.5 11.3
PTVS24VS1UR 24 26.70 28.10 29.50 0.001 0.1 38.9 10.3
PTVS26VS1UR 26 28.90 30.40 31.90 0.001 0.1 42.1 9.5
PTVS28VS1UR 28 31.10 32.80 34.40 0.001 0.1 45.4 8.8
PTVS30VS1UR 30 33.30 35.10 36.80 0.001 0.1 48.4 8.3
PTVS33VS1UR 33 36.70 38.70 40.60 0.001 0.1 53.3 7.5
PTVS36VS1UR 36 40.00 42.10 44.20 0.001 0.1 58.1 6.9
PTVS40VS1UR 40 44.40 46.80 49.10 0.001 0.1 64.5 6.2
PTVS43VS1UR 43 47.80 50.30 52.80 0.001 0.1 69.4 5.8
PTVS45VS1UR 45 50.00 52.65 55.30 0.001 0.1 72.7 5.5
PTVS48VS1UR 48 53.30 56.10 58.90 0.001 0.1 77.4 5.2
PTVS51VS1UR 51 56.70 59.70 62.70 0.001 0.1 82.4 4.9
PTVS54VS1UR 54 60.00 63.15 66.30 0.001 0.1 87.1 4.6
PTVS58VS1UR 58 64.40 67.80 71.20 0.001 0.1 93.6 4.3
PTVS60VS1UR 60 66.70 70.20 73.70 0.001 0.1 96.8 4.1
PTVS64VS1UR 64 71.10 74.85 78.60 0.001 0.1 103.0 3.9
Table 10. Characteristics per type; PTVS7V5S1UR to PTVS64VS1UR
…continued
T
j
=25
°
C unless otherwise specified.
Type number Reverse standoff
voltage
V
RWM
(V)
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
Clamping voltage
V
CL
(V)
I
R
=1mA at V
RWM
(V)
Max Min Typ Max Typ Max Max I
PPM
(A)
P1-P3P4-P6P7-P9P10-P12P13-P13

PTVS14VS1UR,115

Mfr. #:
Buy PTVS14VS1UR,115
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors TVS DIODE PROTECT Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet