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SI8413DB-T1-E1

P1-P3P4-P6P7-P9P10-P10
Si8413DB
www.vishay.com
Vishay Siliconix
S15-1692-Rev. F, 20-Jul-15
1
Document Number: 72947
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 20 V (D-S) MOSFET
Marking: 8413
Ordering Information:
Si8413DB-T1-E1 (Lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
•MICRO FOOT
®
chipscale packaging reduces
footprint area profile (0.62 mm) and
on-resistance per footprint area
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
•Load switch
• Battery switch
• Charger switch
• PA switch
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Refer to IPC / JEDEC
®
(J-STD-020), no manual or hand soldering.
c. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A) Q
g
(TYP.)
-20
0.048 at V
GS
= -4.5 V -6.5
14
0.063 at V
GS
= -2.5 V -5.7
MICRO FOOT
®
1.6 x 1.6
Bump Side View
1
G
4
S
D
3
D
2
Backside View
1
1.6 mm
1.6 mm
8413
xxx
S
G
D
P-Channel MOSFE
T
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL 5 s STEADY STATE UNIT
Drain-Source Voltage V
DS
-20
V
Gate-Source Voltage V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
-6.5 -4.8
A
T
A
= 70 °C -5.2 -3.8
Pulsed Drain Current I
DM
-25
Continuous Source Current (Diode Conduction)
a
I
S
-2.5 -1.3
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.77 1.47
W
T
A
= 70 °C 1.77 0.94
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150
°C
Package Reflow Conditions
b
IR / convection 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
a
t 5 s
R
thJA
35 45
°C/WSteady state 72 85
Maximum Junction-to-Foot (drain) Steady state R
thJF
16 20
Si8413DB
www.vishay.com
Vishay Siliconix
S15-1692-Rev. F, 20-Jul-15
2
Document Number: 72947
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics Transfer Characteristics
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -0.6 - -1.4 V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 12 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -20 V, V
GS
= 0 V - - -1
μA
V
DS
= -20 V, V
GS
= 0 V, T
J
= 70 °C - - -5
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -4.5 V -5 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -4.5 V, I
D
= -1 A - 0.0393 0.048
V
GS
= -2.5 V, I
D
= -1 A - 0.052 0.063
Forward Transconductance
a
g
fs
V
DS
= -10 V, I
D
= -1 A - 7.4 - S
Diode Forward Voltage
a
V
SD
I
S
= -1 A, V
GS
= 0 V - -0.8 -1.1 V
Dynamic
b
Total Gate Charge Q
g
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -1 A
-1421
nCGate-Source Charge Q
gs
-1.7-
Gate-Drain Charge Q
gd
-5.1-
Reverse Recovery Charge R
g
f = 1 MHz - 18 -
Turn-On Delay Time t
d(on)
V
DD
= -10 V, R
L
= 10
I
D
-1 A, V
GEN
= -4.5 V, R
G
= 6
-3150
ns
Rise Time t
r
-5075
Turn-Off Delay Time t
d(off)
- 105 160
Fall Time t
f
- 90 135
Source-Drain Reverse Recovery Time t
rr
I
F
= -1 A, dI/dt = 100 A/μs - 85 130
0
5
10
15
20
25
012345
V
GS
= 5 thru 3 V
2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)
I
D
1.5 V
2.5 V
0
5
10
15
20
25
0.0 0.5 1.0 1.5 2.0 2.5 3.0
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)
I
D
Si8413DB
www.vishay.com
Vishay Siliconix
S15-1692-Rev. F, 20-Jul-15
3
Document Number: 72947
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0.00
0.04
0.08
0.12
0.16
0.20
0 5 10 15 20 25
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
0
1
2
3
4
5
03691215
V
DS
= 10 V
I
D
= 1 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
SD
- Source-to-Drain Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
J
= 150 °C
30
10
1
-
Source Current (A)I
S
T
J
= 25 °C
0
400
800
1200
1600
2000
048121620
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 1 A
T
J
- Junction Temperature (°C)
R
DS(on)
-
On-Resistance (Normalized)
0.00
0.04
0.08
0.12
0.16
0.20
012345
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 1 A
P1-P3P4-P6P7-P9P10-P10

SI8413DB-T1-E1

Mfr. #:
Buy SI8413DB-T1-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 6.5A 2.77W 48mohm @ 4.5V
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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