ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
5 of 9
www.diodes.com
June 2010
© Diodes Incorporated
Product Line o
Diodes Incorporated
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS
Static Characteristics
Drain-Source Clamp Voltage V
DS(AZ)
60 65 70 V I
D
=10mA
Off state Drain Current I
DSS
500 nA V
DS
=12V, V
IN
=0V
Off state Drain Current I
DSS
1 uA V
DS
=36V, V
IN
=0V
Input Threshold Voltage
V
IN
th
0.7 1 1.5 V V
DS
=V
GS
, I
D
=1mA
Input Current I
IN
60 100
μA
V
IN
=+3V
Input Current I
IN
120 200
μA
V
IN
=+5V
Input Current while over
temperature active
220
μA
V
IN
=+5V
Static Drain-Source On-State
Resistance
R
DS(on)
400 600
mΩ
V
IN
=+3V, I
D
=0.5A
Static Drain-Source On-State
Resistance
R
DS(on)
350 500
mΩ
V
IN
=+5V, I
D
=0.5A
Continuous Drain Current (a)(e) I
D
0.9 A
V
IN
=3V; T
A
=25°C
Continuous Drain Current (a)(e) I
D
1.0 A
V
IN
=5V; T
A
=25°C
Continuous Drain Current (a)(d) I
D
1.1 A
V
IN
=3V; T
A
=25°C
Continuous Drain Current (a)(d) I
D
1.2 A
V
IN
=5V; T
A
=25°C
Current Limit (g) I
D
LIM
0.7 1.7 A V
IN
=+3V,
Current Limit (g) I
D
LIM
1 2.2 A V
IN
=+5V
Dynamic Characteristics
Turn On Delay Time t
d(on)
5
μs
V
DD
=12V, I
D
=0.5A,
V
GS
=5V
Rise time t
r
10
μs
Turn Off Delay Time t
d(off)
45
μs
Fall Time f
f
15
μs
Notes:
(g) The drain current is restricted only when the device is in saturation (see graph ‘typical output
characteristic’). This allows the device to be used in the fully on state without interference from
the current limit. The device is fully protected at all drain currents, as the low power dissipation
generated outside saturation makes current limit unnecessary.
