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HMC-ALH382-SX

P1-P3P4-P6
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
v03.1210
General Description
Features
Functional Diagram
Noise Figure: 3.8 dB
P1dB: +12 dBm
Gain: 21 dB
Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.55 x 0.73 x 0.1 mm
Electrical Specications, T
A
= +25° C, Vdd = 2.5V, Idd = 64 mA*
Typical Applications
This HMC-ALH382 is ideal for:
• Short Haul / High Capacity Links
• Wireless LANs
• Military & Space
The HMC-ALH382 is a high dynamic range, four
stage GaAs HEMT MMIC Low Noise Amplier
(LNA) which operates between 57 and 65 GHz. The
HMC-ALH382 features 21 dB of small signal gain,
4 dB of noise gure and an output power of +12
dBm at 1dB compression from a +2.5V supply
voltage. All bond pads and the die backside are Ti/
Au metallized and the amplier device is fully
passivated for reliable operation. This versatile LNA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
HMC-ALH382
Parameter Min. Typ. Max. Units
Frequency Range 57 - 65 GHz
Gain 19 21 dB
Noise Figure 4 5.5 dB
Input Return Loss 12 dB
Output Return Loss 10 dB
Output Power for 1 dB Compression (P1dB) 12 dBm
Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.) 64 100 mA
*Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd
total
= 64 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC-ALH382
v03.1210
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
Linear Gain vs. Frequency Noise Figure vs. Frequency
Input Return Loss vs. Frequency Output Return Loss vs. Frequency
-20
-15
-10
-5
0
57 59 61 63 65
RETURN LOSS (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
57 59 61 63 65
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
57 59 61 63 65
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
57 59 61 63 65
NOISE FIGURE (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC-ALH382
v03.1210
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
Wideband Linear Gain Wideband Input Return Loss
Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc
Gate Bias Voltage -1 to +0.3 Vdc
Channel Temperature 180 °C
Thermal Resistance
(channel to die bottom)
108.4 °C/W
Continuous Pdiss (T= 85 °C)
(derate 9.2 mW/°C above 85 °C)
0.87W
RF Input Power -5 dBm
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Wideband Output Return Loss
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6

HMC-ALH382-SX

Mfr. #:
Buy HMC-ALH382-SX
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier GaAs HEMT lo Noise amp 57 - 65 GHz
Lifecycle:
New from this manufacturer.
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