MJD112 (NPN), MJD117 (PNP)
http://onsemi.com
5
I
C
, COLLECTOR CURRENT (AMP)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
2
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5203
T
J
= 150°C
CURVES APPLY BELOW RATED V
CEO
100ms
1ms
dc
0.1
1
3
7
10
10730
25
25
T, TEMPERATURE (°C)
0
50 75 100 125 1
20
15
10
5
P
D
, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
T
A
T
C
T
A
SURFACE
MOUNT
T
C
0.7
5ms
50 70 200
500ms
ACTIVE−REGION SAFE−OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T
J(pk)
= 150_C; T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
C
ib
0.04
30
1 4 10 40
T
C
= 25°C
200
10
50
70
100
0.1 2 6 20
20
PNP
NPN
0.60.40.20.06
Figure 6. Capacitance
C
ob