IXA220I650NA Datasheet IXA220I650NA | P1-P3

IXA220I650NA

tentative

Single IGBT

XPT IGBT

(C) 3

(E) 1+4

(G) 2

Part number

IXA220I650NA

Backside: isolated

C25

CE(sat)

VV1.6

CES

255

650

=

V= V

I= A

Features / Advantages: Applications: Package:

● Easy paralleling due to the positive temperature

coefficient of the on-state voltage

● Rugged XPT design (Xtreme light Punch Through)

results in:

- short circuit rated for 10 µsec.

- very low gate charge

- low EMI

- square RBSOA @ 2x Ic

● Thin wafer technology combined with the XPT design

results in a competitive low VCE(sat)

● AC motor drives

● Solar inverter

● Medical equipment

● Uninterruptible power supply

● Air-conditioning systems

● Welding equipment

● Switched-mode and resonant-mode

power supplies

● Inductive heating, cookers

● Pumps, Fans

SOT-227B (minibloc)

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

● Either emitter terminal can be used

as main or Kelvin emitter

● Isolation Voltage: V~

3000

IXYS reserves the right to change limits, conditions and dimensions.

20140708Data according to IEC 60747and per semiconductor unless otherwise specified

IXA220I650NA

tentative

-di /dt = A/µs

T = °C

V

CES

V650

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collector current

A

255

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions

Unit

156

V

CE(sat)

total power dissipation

625

W

collector emitter leakage current

5.5

V

turn-on delay time

30

ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient gate emitter voltage

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

400

±30

T = °C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current

V = ±20 V

GE

1.8

1.9

4.84

mA

0.1

mA

0.1

500

G(on)

total gate charge

V = V; V = 15 V; I = A

CE

Q

GE C

280

nC

t

E

d(on)

r

d(off)

f

on

off

50

ns

100

ns

40

ns

2

mJ

7.6

mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE

C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEmax

650

short circuit safe operating area

µs

SCSOA

10T = °C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

800

A

R

thJC

thermal resistance junction to case

0.2

K/W

V

RRM

V650

max. repetitive reverse voltage

T = 25°C

VJ

T = 25°C

forward current

A

tbd

A

C

tbdT = °C

C

I

F25

I

F

T = 25°C

forward voltage

V

tbd

V

VJ

tbdT = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current

mA

*

mA

VJ

*T = 125°C

VJ

I

R R RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

tbd

µC

tbd

A

tbd

ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

I = A; V = 0 V

F

FGE

E

rec

tbd

mJ

reverse recovery energy

R

thJC

thermal resistance junction to case

tbd

K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = °C

VJ

200

3.2

200

3.9

300

360

300

I

CM

1.6

R

thCH

thermal resistance case to heatsink

K/W

R

thCH

thermal resistance case to heatsink

K/W

* not applicable, see Ices at IGBT

IGBT

Diode

300 V

V = V

CEmax

650

80

125

nA

0.10

IXYS reserves the right to change limits, conditions and dimensions.

20140708Data according to IEC 60747and per semiconductor unless otherwise specified

IXA220I650NA

tentative

1)

I

RMS

is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product

with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.

Ratings

abcdZyyww

XXXXX

Product Marking

Logo

Part No.

DateCode

Assembly Code

Assembly Line

®

I

X

A

220

I

650

NA

Part description

IGBT

XPT IGBT

Gen 1 / std

Single IGBT

SOT-227B (minibloc)

=

Current Rating [A]

Reverse Voltage [V]

=

Package

T

op

°C

M

D

Nm1.5

mounting torque

1.1

T

VJ

°C150

virtual junction temperature

-40

Weight g30

Symbol Definition typ. max.min.Conditions

operation temperature

Unit

M

T

Nm1.5

terminal torque

1.1

V V

t = 1 second

V

t = 1 minute

isolation voltage

mm

10.5 3.2

8.6 6.8

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

150 A

per terminal

125-40

terminal to terminal

SOT-227B

(

minibloc

)

Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering

1

)

50/60 Hz, RMS; I ≤ 1 mA

ISOL

IXA220I650NA 514555Tube 10IXA220I650NAStandard

3000

ISOL

T

stg

°C150

storage temperature

-40

2500

threshold voltage

V

mΩ

V

0 max

R

0 max

slope resistance *

1.1

5.3

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

IGBT

150 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions.

20140708Data according to IEC 60747and per semiconductor unless otherwise specified

IXA220I650NA

IXA220I650NA

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