KSC1173YTSTU Datasheet KSC1173YTU, KSC1173OTU, KSC1173YTSTU | P1-P3

KSC1173 — NPN Epitaxial Silicon Transistor

KSC1173 Rev. A2 1

August 2009

KSC1173

NPN Epitaxial Silicon Transistor

Features

• Low Frequency Power Amplifier, Power Regulator

• Collector Current : I

C

=3A

• Collector Dissipation : P

C

=10W (T

C

=25°C)

• Complement to KSA473

Absolute Maximum Ratings * T

A

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Symbol Parameter Value Units

BV

CBO

Collector-Base Voltage 30 V

BV

CEO

Collector-Emitter Voltage 30 V

BV

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current 3 A

P

C

Collector Dissipation (T

C

=25°C) 10 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 to +150 °C

1.Base 2.Collector 3.Emitter

1

TO-220

KSC1173 — NPN Epitaxial Silicon Transistor

KSC1173 Rev. A2 2

Electrical Characteristics T

A

= 25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= 500μA, I

E

= 0 30 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 10mA I

B

= 0 30 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= -1mA, I

C

= 0 5

I

CBO

Collector Cut-off Current V

CB

= 20V, I

E

= 0 1.0 μA

I

EBO

Emitter Cut-off Current V

EB

= 5V, I

C

= 0 1.0 μA

h

FE1

h

FE2

DC Current Gain V

CE

= 2V, I

C

= 0.5A

V

CE

= 2V, I

C

= 2.5A

70

25

240

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 2A, I

B

= 0.2A 0.3 0.8 V

V

BE

(on) Base-Emitter On Voltage V

CE

= 2V, I

C

= 0.5A 0.75 1.0 V

f

T

Current Gain Base Width Product V

CE

= 2V, I

C

= 0.5A 100 MHz

C

ob

Output Capacitance V

CB

= 10V, I

E

=0,

f = 1MHz

35 pF

Classification O Y

h

FE1

70 ~ 140 120 ~ 240

KSC1173 — NPN Epitaxial Silicon Transistor

KSC1173 Rev. A2 3

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area

0.00.81.62.43.24.04.85.66.47.2

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

I

B

= 40mA

I

B

= 30mA

I

B

= 20mA

I

B

= 15mA

I

B

= 10mA

I

B

= 8mA

I

B

= 5mA

I

B

= 3mA

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.01 0.1 1

10

100

1000

V

CE

= 2V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1

0.01

0.1

1

10

I

C

= 10 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

V

CE

=2V

I

C

(A), COLLECTOR CURRENT

V

BE

(V), BASE-EMITTER VOLTAGE

110100

10

100

I

E

=0

f=1MHz

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

1 10 100

0.1

1

10

Thermal

limitation

1ms

*10ms

Tc=25?

*Single Pulse

S/B Limitation

I

C

MAX(DC)

*50ms

I

C

MAX(Pulse)

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

KSC1173YTSTU

KSC1173YTSTU

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