QEE213

EMITTER
0.174 (4.44)
0.060 (1.50)
0.030 (0.76)
0.047 (1.20)
0.177 (4.51)
0.224 (5.71)
0.5 (12.7)
MIN
0.020 (0.51)
SQ. (2X)
0.060 (1.52)
0.100 (2.54)
R 0.030 (0.76)
PACKAGE DIMENSIONS
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
• Wavelength = 940 nm, GaAs
• Package Type: Sidelooker
• Medium Beam Angle, 50°
• Clear Plastic Package
• Matched Photosensors: QSE213 and QSE243
ANODE
CATHODE
SCHEMATIC
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE213
DESCRIPTION
The QEE213 is a 940nm GaAs LED encapsulated in a medium angle, thin plastic sidelooker package.
2001 Fairchild Semiconductor Corporation
DS300239 9/18/01 1 OF 4 www.fairchildsemi.com
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to + 100 °C
Storage Temperature T
STG
-40 to + 100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
100 mA
Reverse Voltage V
R
5V
Peak Forward Current
(5)
I
FP
1A
Power Dissipation
(1)
P
D
100 mW
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE213
Parameter Test Conditions Symbol Min Typ Max Units
Peak Emission Wavelength I
F
= 100 mA l
P
940 nm
Emission Angle I
F
= 100 mA U ±25 Deg.
Forward Voltage I
F
= 100 mA, tp = 20 ms V
F
—— 1.5 V
Reverse Current V
R
= 5 V I
R
—— 10 µA
Radiant Intensity I
F
= 100 mA, tp = 20 ms I
e
2 ——mW/sr
Rise Time I
F
= 100 mA t
r
1
µs
Fall Time tp = 100 µs, T = 10 mS t
f
1
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16 (1.6 mm) minimum from housing.
5. Pulse conditions: tp = 100 µs, T
=
10 ms.
www.fairchildsemi.com 2 OF 4 9/18/01 DS300239
0
10
3
10
2
10
1
10
0
123456
I
F
Pulsed
t
pw
= 100 µs
T
A
= 25˚C
V
F
- FORWARD VOLTAGE (V)
I
F
- FORWARD CURRENT (mA)
Fig. 1 Forward Current vs. Forward Voltage
0 10 100 1000
10
1
0.1
0.01
0.001
I
E
- NORMALIZED RADIANT INTENSITY
I
F
- FORWARD CURRENT (mA)
Fig. 3 Normalized Radiant Intensity
vs. Forward Current
Fig. 4 Radiation Diagram
Normalized to:
I
F
= 100 mA Pulsed
t
pw
= 100 µs
Duty Cycle = 0.1%
T
A
= 25˚C
90
0
10
20
30
40
50
60
7
0
80
100
110
120
130
140
150
160
180
170
1.0
0.8
0.6
0.4
0.2
0.2
0.4
0.6
0.8
1.0
0
V
F
- FORWARD VOLTAGE (V)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 2 Forward Voltage vs. Ambient Temperature
-40 -20 0 20 40 60 80 100
0.0
0.5
1.0
1.5
2.0
I
F
Pulsed
t
pw
= 100 µs
Duty Cycle = 0.1%
I
F = 100 mA
I
F = 20 mA
I
F = 50 mA
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE213
DS300239 9/18/01 3 OF 4 www.fairchildsemi.com
TYPICAL PERFORMANCE CURVES

QEE213

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
Infrared Emitters GaaS Type a LED Sidelooker
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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