1/8September 2002
.
STT3PF30L
P-CHANNEL 30V - 0.14 Ω - 3A SOT23-6L
STripFET™ II POWER MOSFET
■ TYPICAL R
DS
(on) = 0.14 Ω
■ STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
■ CELLULAR
MARKING
■ STA3
TYPE
V
DSS
R
DS(on)
I
D
STT3PF30L 30 V <0.165
Ω
3 A
SOT23-6L
ABSOLUTE MAXIMUM RATINGS
(
•)
Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
Ω
)
30 V
V
GS
Gate- source Voltage ± 16 V
I
D
Drain Current (continuous) at T
C
= 25°C
2.4 A
I
D
Drain Current (continuous) at T
C
= 100°C
1.5 A
I
DM
(
•)
Drain Current (pulsed) 10 A
P
tot
Total Dissipation at T
C
= 25°C
1.6 W
INTERNAL SCHEMATIC DIAGRAM
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