VS-ST280CH06C1

VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Dec-13
4
Document Number: 94401
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
40
120
80
50
130
90
60
140
100
70
110
150
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
100 200 300 400
500
0
30°
60°
90°
120°
180°
ST280CH..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
Ø
Conduction angle
100 200 300 400 500 600
700
0
20
120
80
40
130
90
60
30
50
140
100
70
110
150
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
DC
30°
60°
90°
120°
180°
ST280CH..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
Ø
Conduction period
20
120
80
40
130
90
60
30
50
140
100
70
110
150
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
100 300 500200 400 600 700
800
0
30°
60°
90°
ST280CH..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
120°
180°
Ø
Conduction angle
20
120
80
30
130
90
40
50
60
140
100
70
110
150
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
200 400 600 1000
1200
8000
DC
30°
60°
90°
120°
180°
ST280CH..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
Ø
Conduction period
0
1000
600
200
1100
700
400
100
300
1200
800
500
900
1300
Maximum Average
On-State Power Loss (W)
Average On-State Current (A)
100 200 300 600
800
500
700
4000
180°
120°
90°
60°
30°
RMS limit
ST280CH..C Series
T
J
= 150 °C
Ø
Conduction angle
0
1400
600
1600
800
200
1000
400
1200
1800
Average On-State Current (A)
200 400 600 800
12001000
0
Maximum Average
On-State Power Loss (W)
DC
180°
120°
90°
60°
30°
RMS limit
ST280CH..C Series
T
J
= 150 °C
Ø
Conduction period
VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Dec-13
5
Document Number: 94401
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
3000
4500
5000
3500
5500
4000
6000
6500
Peak Half Sine Wave
On-State Current (A)
Number Of Equal Amplitude Half Cycle
Current Pulses (N)
10
100
1
ST280CH..C Series
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated V
RRM
applied following surge.
2500
6000
4000
7000
6500
4500
3000
5000
3500
5500
7500
Pulse Train Duration (s)
0.1
1
0.01
Peak Half Sine Wave
On-State Current (A)
versus pulse train duration. Control
of conduction may not be maintained.
ST280CH..C Series
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum non-repetitive surge current
100
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
1.0 2.01.5 2.5 3.0 3.5
4.0
0.5
T
J
= 25 °C
T
J
= 150 °C
ST280CH..C Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJ-hs
- Transient
Thermal Impedance (K/W)
10
Steady state value
R
thJ-hs
= 0.17 K/W
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
ST280CH..C Series
VS-ST280CH Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Dec-13
6
Document Number: 94401
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
10 100
V
GD
I
GD
(b)
(a)
T
J
= 40 °C
T
J
= 25 °C
(1) (2)
(3)
a) Recommended load line for
b) Recommended load line for
30 % rated dI/dt: 10 V, 10 Ω
Frequency limited by P
G(AV)
rated dI/dt: 20 V, 10 Ω; t
r
1 µs
t
r
1 µs
(1) P
GM
= 10 W, t
p
= 4 ms
(2) P
GM
= 20 W, t
p
= 2 ms
(3) P
GM
= 40 W, t
p
= 1 ms
(4) P
GM
= 60 W, t
p
= 0.66 ms
Device: ST280CH..C Series
T
J
= 150 °C
Rectangular gate pulse
(4)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95074
- Thyristor2
- Essential part number
3
- 0 = Converter grade
4
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
- CH = Ceramic PUK, high temperature
6
- C = PUK case TO-200AB (A-PUK)
7
- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)8
- Critical dV/dt:
9
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9
STVS- 28 0 CH 06 C 1 -
1 - Vishay Semiconductors product

VS-ST280CH06C1

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 500 Amp 400 Volt 1130 Amp IT(RMS)
Lifecycle:
New from this manufacturer.
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