©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC2682
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classificntion
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 180 V
V
CEO
Collector-Emitter Voltage 180 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 100 mA
P
C
Collector Dissipation (T
a
=25°C) 1.2 W
P
C
Collector Dissipation (T
C
=25°C) 8 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= 180V, I
E
= 0 1.0 µA
I
EBO
Emitter Cut-off Current V
EB
= 3V, I
C
= 0 1.0 µA
h
FE1
h
FE2
* DC Current Gain V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10mA
90
100
190
200 320
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 50mA, I
B
= 5mA 0.12 0.5 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= 50mA, I
B
= 5mA 0.8 1.5 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 20mA 200 MHz
C
ob
Output Capacitance
V
CB
= 10V, I
E
= 0
f = 1MHz
3.2 5.0 pF
NF Noise Figure V
CE
= 10V, I
C
= 1mA
R
S
= 10KΩ, f = 1kHz
4dB
Classification O Y
h
FE2
100 ~ 200 160 ~ 320
KSC2682
Audio Frequency Power Amplifier
• Complement to KSA1142
1
TO-126
1. Emitter 2.Collector 3.Base
