BUK7Y18-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 7 April 2010 7 of 14
NXP Semiconductors
BUK7Y18-55B
N-channel TrenchMOS standard level FET
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Forward transconductance as a function of
drain current; typical values.
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
003aac945
0
40
80
120
160
0246810
V
DS
(V)
I
D
(A)
6.5
6
7
5.5
15
5
10
8
V
GS
(V) = 4.5
20
003aac949
0
20
40
60
80
0 40 80 120 160
I
D
(A)
R
DSon
(m
Ω
)
75 6
4.5
5.5 6.5 8
15
10
V
GS
(V) = 20
003aac950
10
20
30
40
0102030
I
D
(A)
g
fs
(S)
003aac946
0
20
40
60
0246
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C