Vishay Siliconix
SiR878ADP
New Product
Document Number: 63369
S11-1999-Rev. B, 10-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 100 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Primary Side Switch
• Telecom/Server 48 V, Full/Half-Bridge DC/DC
• Industrial
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() Max.
I
D
(A)
a
Q
g
(Typ.)
100
0.014 at V
GS
= 10 V
40
13.9 nC
0.0148 at V
GS
= 7.5 V
38
0.018 at V
GS
= 4.5 V
34
Ordering Information: SiR878ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK
®
SO-8
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
40
A
T
C
= 70 °C
32
T
A
= 25 °C
13.3
b, c
T
A
= 70 °C
10.6
b, c
Pulsed Drain Current (t = 300 µs)
I
DM
80
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
40
T
A
= 25 °C
4.5
b, c
Single Pulse Avalanche Current
L =0.1 mH
I
AS
20
Single Pulse Avalanche Energy
E
AS
20
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
44.5
W
T
C
= 70 °C
28.5
T
A
= 25 °C
5
b, c
T
A
= 70 °C
3.2
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t 10 s
R
thJA
20 25
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
2.1 2.8