©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
FPN660/FPN660A
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltage (V) and currents (A) are negative polarity for PNP transistors
Electrical Characteristics
T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
NOTE: All voltage (V) and currents (A) are negative polarity for PNP transistors.
Symbol Parameter FPN660 FPN660A Units
V
CEO
Collector-Emitter Voltage 60 60 V
V
CBO
Collector-Base Voltage 80 60 V
V
EBO
Emitter-Base Voltage 5 5 V
I
C
Collector Current - Continuous 3 3 A
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ +150 -55 ~ +150 °C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
B
= 0 55 V
BV
CBO
Collector-Base Breakdown Voltage I
E
= 100µA, I
E
= 0 FPN660
FPN660A
80
60
V
V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 100µA, I
C
= 0 5.0 V
I
CBO
Collector-Base Cutoff Current V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= 100°C
100
10
nA
µA
I
EBO
Emitter-Base Cutoff Current V
EB
= 4.0V, I
C
= 0 100 nA
On Characteristics *
h
FE
DC Current Gain I
C
= 100mA, V
CE
= 2.0V
I
C
= 500mA, V
CE
= 2.0V FPN660
FPN660A
I
C
= 1.0A, V
CE
= 2.0V
I
C
= 2.0A, V
CE
= 2.0V
70
100
250
80
40
300
550
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 1.0A, I
B
= 100mA
I
C
= 2.0A, I
B
= 200mA FPN660
FPN660A
300
450
400
mV
mV
mV
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 1.0A, I
B
= 100mA 1.25 V
V
BE
(on) Base-Emitter On Voltage I
C
= 1.0A, V
CE
= 2.0V 1.0 V
Small Signal Characteristics
C
obo
Output Capacitance V
CB
= 10V, I
E
= 0, f = 1MHz 45 pF
f
T
Transition Frequency I
C
= 100mA, V
CE
= 5.0V,
f = 100MHz
75 MHz
FPN660/FPN660A
PNP Low Saturation Transistor
• These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
• Sourced from process PA.
C
B
E
TO-226
