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DMN2022UFDF-13

P1-P3P4-P6
DMN2022UFDF
D
atasheet number: DS36744 Rev. 1 - 2
1 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN2022UFDF
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
20V
22m @ V
GS
= 4.5V
7.9A
26m @ V
GS
= 2.5V
7.2A
36m @ V
GS
= 1.8V
6.1A
50m @ V
GS
= 1.5V
5.2A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Battery Management Application
Power Management Functions
DC-DC Converters
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm
2
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 TYPE F
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Quantity per reel
DMN2022UFDF-7 NC 7 3,000
DMN2022UFDF-13 NC 13 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Pin Out
Internal Schematic
NC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
U-DFN2020-6
TYPE F
Bottom View
NC
Y
M
Bottom View Top View
D
S
G
Gate Protection
Diode
ESD PROTECTED
DMN2022UFDF
D
atasheet number: DS36744 Rev. 1 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN2022UFDF
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.9
6.3
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
9.4
7.5
A
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
40 A
Continuous Source-Drain Diode Current
T
A
= +25°C
I
S
2 A
Avalanche Current (Note 7) L = 0.1mH
I
AS
12 A
Avalanche Energy (Note 7) L = 0.1mH
E
AS
8 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.66
W
T
A
= +70°C
0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
188
°C/W
t<5s 135
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.03
W
T
A
= +70°C
1.31
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
60
°C/W
t<5s 43
Thermal Resistance, Junction to Case (Note 6) Steady state
R
JC
8.3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
1 µA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±10 µA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
0.5 — 1.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
—
15 22
m
V
GS
= 4.5V, I
D
= 4A
18 26
V
GS
= 2.5V, I
D
= 4A
24 36
V
GS
= 1.8V, I
D
= 4A
35 50
V
GS
= 1.5V, I
D
= 4A
Forward Transfer Admittance
|Y
fs
|
—
18 — S
V
DS
= 5V, I
D
= 12A
Diode Forward Voltage
V
SD
—
0.7 1.0 V
V
GS
= 0V, I
S
= 5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 907 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 98 —
Reverse Transfer Capacitance
C
rss
— 38 —
Gate Resistance
R
g
— 194 —
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 9.8 —
nC
V
DS
= 10V, I
D
= 6.5A
Total Gate Charge (V
GS
= 8V) Q
g
— 18 —
Gate-Source Charge
Q
g
s
— 1.5 —
Gate-Drain Charge
Q
g
d
— 1.8 —
Turn-On Delay Time
t
D
(
on
)
— 56 —
ns
V
DS
= 10V, V
GS
= 4.5V,
R
G
= 6, R
L
= 10,I
D
= 1A
Turn-On Rise Time
t
r
— 87 —
Turn-Off Delay Time
t
D
(
off
)
— 632 —
Turn-Off Fall Time
t
f
— 239 —
Reverse Recovery Time
t
r
r
— 143 — ns
I
F
= 4A, di/dt = 100A/s
Reverse Recovery Charge
Q
r
r
—- 136 — nC
I
F
= 4A, di/dt = 100A/s
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN2022UFDF
D
atasheet number: DS36744 Rev. 1 - 2
3 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN2022UFDF
10
15
20
25
30
0 0.5 1.0 1.5 2.0
0
5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V= 2.5V
GS
V= 3.0V
GS
V= 4.5V
GS
V= 8.0V
GS
V= 2.0V
GS
V= 1.5V
GS
0 0.5 1.0 1.5 2.0 2.5
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
0
4
8
I,
D
R
AI
N
C
U
R
R
E
N
T (A)
D
12
16
20
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25 30
0
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
V = 2.5V
GS
V = 4.5V
GS
V = 1.8V
GS
0.01
0.02
0.03
0.04
0.05
0.06
0
04 8121620
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-S
O
URCE
O
N-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
0.6
0.8
1.0
1.2
1.4
1.6
R
,
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I= 6.5A
GS
D
V= V
I= 5.5A
GS
D
2.5
0.01
0.02
0.03
0.04
0.05
0.06
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
V = 4.5V
I = 6.5A
GS
D
V= V
I = 5.5A
GS
D
2.5
P1-P3P4-P6

DMN2022UFDF-13

Mfr. #:
Buy DMN2022UFDF-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W
Lifecycle:
New from this manufacturer.
Delivery:
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