TLP3023SF

TLP3021(S),TLP3022(S),TLP3023(S)
2010-10-01
1
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC
TLP3021(S),TLP3022(S),TLP3023(S)
OFFICE MACHINE
HOUSEHOLD USE EQUIPMENT
TRIAC DRIVER
SOLID STATE RELAY
The TOSHIBA TLP3021 (S), TLP3022 (S) and TLP3023 (S) consist of
photo-triac optically coupled to a gallium arsenide infrared emitting diode
in a six lead plastic DIP.
z Peak Off-State Voltage : 400 V (min)
z Trigger LED Current : 15 mA (max) (TLP3021(S))
10 mA (max) (TLP3022(S))
5 mA (max) (TLP3023(S))
z On-State Current : 100 mA (max)
z Isolation Voltage : 5000Vrms(Min)
z UL Recognized : UL1577,File No.E67349
z SEMKO Approved : SS EN60065
SS EN60950, File No.9841105
z BSI Approved : BS EN60065, File No.8385
BS EN60950, File No.8386
z Option (D4) type
VDE approved: DIN EN60747-5-2
Approved No. 40009302
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 8000V
PK
(Note):When a EN60747-5-2 approved type is needed,
please designate the "Option (D4)"
z Construction Mechanical Rating
7.62 mm pich
Standard Type
10.16 mm pich
TLPxxxxF Type
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (Min)
7.0 mm (Min)
0.5 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.5 mm (Min)
JEDEC
JEITA
TOSHIBA 11-7A9
Weight: 0.39g (typ.)
Unit: mm
1: Anode
2: Csthode
3: N.C.
4:Terminal 1
6:Terminal 2
1
2
3
4
6
Pin Configuration
(top view)
TLP3021(S),TLP3022(S),TLP3023(S)
2010-10-01
2
Absolute Maximum Ratings (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current I
F
50 mA
Forward Current Derating (Ta53°C) I
F
/°C 0.7 mA /°C
Peak Forward Current (100μs pulse, 100pps) I
FP
1 A
Power Dissipation P
D
100 mW
Power Dissipation Derating (Ta25°C) P
D
/°C -1.0 mW/°C
LED
Reverse Voltage V
R
5 V
Junction Temperature Tj 125 °C
Off-State Output Terminal Voltage V
DRM
400 V
Ta=25°C 100
On-State RMS Current
Ta=70°C
I
T(RMS)
50
mA
On-State Current Derating (Ta25°C) I
T
/°C -1.1 mA /°C
Peak On-State Current (100μs pulse, 120pps) I
TP
2 A
Peak Nonrepetitive Surge Current (Pw=10ms) I
TSM
1.2 A
Power Dissipation P
D
300
mW
Power Dissipation Derating (Ta25°C) P
D
/°C -4.0
mW/°C
DETECTOR
Junction Temperature T
j
115
°C
Storage Temperature Range T
stg
55 to 150 °C
Operating Temperature Range T
opr
40 to 100 °C
Lead Soldering Temperature (10s) T
sol
260
°C
Total Package Power Dissipation P
T
330
mW
Total Package Power Dissipation Derating (Ta25°C) P
T
/°C -4.4
mW /°C
Isolation Voltage (AC,1min. , R.H.60%) (Note 2) BV
S
5000 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 2) Device considered a two terminal device :Pins1,2 and 3 shorted together and pin4 and pin6 shorted
together.
Recommended Operating Conditions
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Supply Voltage V
AC
120 V
ac
Forward Current I
F
*
15 20 25 mA
Peak On-State Current I
TP
1 A
Operating Temperature T
opr
25 — 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
*In The case of TLP3022
TLP3021(S),TLP3022(S),TLP3023(S)
2010-10-01
3
Individual Electrical Characteristics (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage V
F
I
F
= 10 mA 1.0 1.15 1.3 V
Reverse Current I
R
V
R
= 5 V
10 μA
LED
Capacitance C
T
V = 0, f=1MHz
10 — pF
Peak Off-State Current I
DRM
V
DRM
=400V
10 1000 nA
Peak On-State Voltage V
TM
I
TM
=100mA
1.7 3.0 V
Holding Current I
H
0.6
mA
Critical Rate of Rise of
Off-State Voltage
dv/dt
Vin=120Vrms , Ta=85°C (Fig.1) 200 500
V/μs
DETECTOR
Critical Rate of Rise of
Commutating Voltage
dv/dt(c)
Vin=30Vrms , IT=15mA (Fig.1) 0.2
— V/μs
Coupled Electrical Characteristics (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TLP3021(S)
— 15
TLP3022(S)
5 10
Trigger LED Current
TLP3023(S)
I
FT
V
T
=3V
— 5
mA
Capacitance (Input to Output) C
S
VS=0 , f=1MHz
0.8
pF
Isolation Resistance R
S
VS=500V(R.H.60%)
5×10
10
10
14
Ω
AC , 1minute 5000
AC , 1second,in oil
10000
Vrms
Isolation Voltage BV
S
DC , 1minute,in oil
10000
Vdc
Fig. 1 dv / dt test circuit
5V,V
CC
dv / dtc
0V
V
in
dv / dt
R
in
R
L
2k
1
2
3
6
4
V
CC
120
+

TLP3023SF

Mfr. #:
Manufacturer:
Description:
OPTOISOLATOR 5KV TRIAC 6DIP 5L
Lifecycle:
New from this manufacturer.
Delivery:
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