ST1S06xx Electrical characteristics
Doc ID 12236 Rev 9 7/20
V
IN_SW
= V
IN_A
= V
INH
= 5 V, V
O
= 1.2 V, C
I
= 4.7 µF, C
O
= 22 µF, L1 = 3.3 µH, T
J
= -30 °C to
125 °C unless otherwise specified. Typical values are referred to T
J
= 25 °C.
Note: 1 Guaranteed by design, but not tested in production
Table 6. Electrical characteristics for ST1S06PM12
Symbol Parameter Test conditions Min. Typ. Max. Unit
OUT Output feedback pin 1.176 1.2 1.224 V
I
O
I
O
pin bias current V
O
= 1.5V 15 20 µA
V
I
Minimum input voltage I
O
= 10mA to 1.5A 2.7 V
I
Q
Quiescent current
V
INH
> 1.2V 1.5 mA
V
INH
< 0.4V, T
J
= -30°C to 85°C 1 µA
I
O
Output current V
I
= 2.7 to 5.5V Note 1 1.5 A
V
INH
Inhibit threshold
Device ON, V
I
= 2.7 to 5.5V 1.3
VDevice ON, V
I
= 2.7 to 5V 1.2
Device OFF 0.4
I
INH
Inhibit pin current 2µA
%V
O
/ΔV
I
Reference line regulation V
I
= 2.7V to 5.5V Note 1 0.2 0.3
%V
O
/
ΔV
I
%V
O
/ΔI
O
Reference load regulation I
O
= 10mA to 1.5A Note 1 0.2 0.3
%V
O
/
ΔI
O
PWMf
S
PWM switching frequency V
FB
= 0.8V 1.2 1.5 1.8 MHz
D
MAX
Maximum duty cycle 80 87 %
R
DSON
-N NMOS switch on resistance I
SW
= 750 mA 0.12 Ω
R
DSON
-P PMOS switch on resistance I
SW
= 750 mA 0.15 Ω
I
SWL
Switching current limitation Note 1 2.3 A
ν
Efficiency Note 1
I
O
= 10mA to 100mA, V
O
= 1.2V 60
%
I
O
= 100mA to 1.5A, V
O
= 1.2V 80 85
T
SHDN
Thermal shutdown 130 150 °C
T
HYS
Thermal shutdown hysteresis 15 °C
%V
O
/ΔI
O
Load transient response
I
O
= 100mA to 750mA, T
J
=
25°C t
R
= t
F
≥ 200ns, Note 1
-5 +5 %V
O
%V
O
/ΔI
O
Short circuit removal response
I
O
= 10mA to I
O
= short,
T
J
= 25°C Note 1
-10 +10 %V
O
