SiHB24N65E
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Vishay Siliconix
S15-0291-Rev. H, 23-Feb-15
4
Document Number: 91477
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Fig. 6 - Typical Source-Drain Diode Forward Voltage
Fig. 7 - Maximum Safe Operating Area
Fig. 8 - Maximum Drain Current vs. Case Temperature
Fig. 9 - Temperature vs. Drain-to-Source Voltage
Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case
V
SD
, Source-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
J
= 150 °C
T
J
= 25 °C
V
GS
= 0 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
0.1
1
10
100
1000
1 10 100 10 000
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Operation in this area
limited by R
DS(on)
BVDSS Limited
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
Limited by R
*
100 μs
1 ms
10 ms
1000
I
DM
limited
T
J
, Case Temperature (°C)
I
D
, Drain Current (A)
0
5
10
15
20
25
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
V
DS
, Drain-to-Source
- 60 0 160
Breakdown Voltage (V)
- 40 - 20 20 40 60 80 100 120 140
650
675
700
725
750
775
800
825
Pulse Time (s)
Normalized Effective Transient
Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse