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NSV12200LT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
October, 2016 − Rev. 5
1 Publication Order Number:
NSS12200L/D
NSS12200L
12 V, 4.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Collector-Emitter Voltage V
CEO
−12 Vdc
Collector-Base Voltage V
CBO
−12 Vdc
Emitter-Base Voltage V
EBO
−7.0 Vdc
Collector Current − Continuous I
C
−2.0 A
Collector Current − Peak I
CM
−4.0 A
Electrostatic Discharge ESD HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 1) 460
3.7
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
270 °C/W
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 2) 540
4.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
230 °C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Note 3)
710 mW
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm
2
, 1 oz. copper traces.
2. FR−4 @ 500 mm
2
, 1 oz. copper traces.
3. Thermal response.
Device Package Shipping
†
ORDERING INFORMATION
NSS12200LT1G,
NSV12200LT1G*
SOT−23
(Pb−Free)
3000/Tape & Reel
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23 (TO−236)
CASE 318
STYLE 6
3
2
1
www.onsemi.com
−12 VOLTS
4.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
65 mW
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VE M G
G
VE = Specific Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
NSS12200L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−12 − −
Vdc
Collector−Base Breakdown Voltage
(I
C
= −0.1 mAdc, I
E
= 0)
V
(BR)CBO
−12 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −0.1 mAdc, I
C
= 0)
V
(BR)EBO
−7.0 − −
Vdc
Collector Cutoff Current
(V
CB
= −12 Vdc, I
E
= 0)
I
CBO
− − −0.1
mAdc
Emitter Cutoff Current
(V
EB
= −7.0 Vdc)
I
EBO
− − −0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= −10 mA, V
CE
= −2.0 V)
(I
C
= −500 mA, V
CE
= −2.0 V)
(I
C
= −1.0 A, V
CE
= −2.0 V)
(I
C
= −2.0 A, V
CE
= −2.0 V)
h
FE
250
250
200
150
−
300
−
−
−
−
−
−
Collector−Emitter Saturation Voltage (Note 4)
(I
C
= −0.1 A, I
B
= −0.010 A) (Note 5)
(I
C
= −1.0 A, I
B
= −0.100 A)
(I
C
= −1.0 A, I
B
= −0.010 A)
(I
C
= −2.0 A, I
B
= −0.200 A)
V
CE(sat)
−
−
−
−
−0.008
−0.065
−0.100
−0.130
−0.011
−0.090
−0.120
−0.180
V
Base −Emitter Saturation Voltage (Note 4)
(I
C
= −1.0 A, I
B
= −0.01 A)
V
BE(sat)
− − −0.900
V
Base −Emitter Turn−on Voltage (Note 4)
(I
C
= −1.0 A, V
CE
= −2.0 V)
V
BE(on)
− − −0.900
V
Cutoff Frequency
(I
C
= −100 mA, V
CE
= −5.0 V, f = 100 MHz)
f
T
100 − −
MHz
Input Capacitance (V
EB
= −0.5 V, f = 1.0 MHz) Cibo − − 350 pF
Output Capacitance (V
CB
= −3.0 V, f = 1.0 MHz) Cobo − − 120 pF
SWITCHING CHARACTERISTICS
Delay (V
CC
= −10 V, I
C
= 750 mA, I
B1
= 15 mA) t
d
− − 60 ns
Rise (V
CC
= −10 V, I
C
= 750 mA, I
B1
= 15 mA) t
r
− − 120 ns
Storage (V
CC
= −10 V, I
C
= 750 mA, I
B1
= 15 mA) t
s
− − 250 ns
Fall (V
CC
= −10 V, I
C
= 750 mA, I
B1
= 15 mA) t
f
− − 130 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
NSS12200L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
−55°C
V
CE(sat)
= 150°C
IC/IB = 10
25°C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A)
101.00.10.010.001
0
0.05
0.1
0.15
0.2
0.25
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
101.00.10.010.001
100
150
300
350
500
700
750
800
101.00.10.010.001
0.3
0.4
0.5
0.6
0.7
0.8
1.0
1.1
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
I
C
, COLLECTOR CURRENT (A) I
B
, BASE CURRENT (mA)
101.00.10.010.001
0.1
0.2
0.3
0.4
0.5
0.8
0.9
1.0
100101.00.10.01
0
0.2
0.4
0.6
0.8
1.0
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
V
BE(sat)
, BASE EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE EMITTER TURN−ON
VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER
VOLTAGE (V)
IC/IB = 100
25°C−55°C
I
C
, COLLECTOR CURRENT (A)
101.00.10.010.001
0
0.05
0.1
0.15
0.2
0.35
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
= 150°C
0.25
0.3
650
600
550
200
250
400
450
0.9
150°C (5.0 V)
150°C (2.0 V)
25°C (5.0 V)
25°C (2.0 V)
−55°C (5.0 V)
−55°C (2.0 V)
25°C
−55°C
150°C
0.6
0.7
25°C
−55°C
150°C
V
CE
= −2.0 V
V
CE
(V) I
C
= 500 mA
300 mA
10 mA
100 mA
IC/IB = 10
P1-P3P4-P5

NSV12200LT1G

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Manufacturer:
ON Semiconductor
Description:
Translation - Voltage Levels 12V PNP LOW VCE(SAT) XT
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