PMBD914_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 11 February 2009 3 of 10
NXP Semiconductors
PMBD914
Single high-speed switching diode
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] T
j
=25°C prior to surge.
[3] Soldering point of cathode tab.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Soldering point of cathode tab.
7. Characteristics
[1] When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100 Ω; measured at I
R
= 1 mA.
[2] When switched from I
F
= 10 mA; t
r
=20ns.
P
tot
total power dissipation T
amb
≤ 25 °C
[1][3]
- 250 mW
T
j
junction temperature - 150 °C
T
stg
storage temperature −65 +150 °C
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
R
th(j-t)
thermal resistance from
junction to tie-point
[2]
- - 330 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 1 mA - - 715 mV
I
F
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
= 150 mA - - 1.25 V
I
R
reverse current V
R
=25V --25nA
V
R
=75V --1µA
V
R
= 25 V; T
j
= 150 °C --30µA
V
R
= 75 V; T
j
= 150 °C --50µA
C
d
diode capacitance f = 1 MHz; V
R
= 0 V - - 1.5 pF
t
rr
reverse recovery time
[1]
--4ns
V
FR
forward recovery voltage
[2]
- - 1.75 V
