OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

GSD2004WS-E3-08

P1-P3P4-P4
GSD2004WS
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 14-Oct-16
1
Document Number: 85730
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diode, High Voltage
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode,especially suited for
applications requiring high voltage capability
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
GSD2004WS
GSD2004WS-E3-08 or GSD2004WS-E3-18
Single diode B6 Tape and reel
GSD2004WS-HE3-08 or GSD2004WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Continuous reverse voltage V
R
240 V
Repetitive peak reverse voltage V
RRM
300 V
Forward current (continuous) I
F
225 mA
Peak repetitive forward current I
FRM
625 mA
Non-repetitive peak forward current
t
p
= 1 μs I
FSM
4A
t
p
= 1 s I
FSM
1A
Power dissipation
(1)
P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Typical thermal resistance junction to
ambient air
(1)
R
thJA
650 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +150 °C
GSD2004WS
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 14-Oct-16
2
Document Number: 85730
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Leakage Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA V
BR
300 V
Leakage current
V
R
= 240 V I
R
100 nA
V
R
= 240 V, T
j
= 150 °C I
R
100 μA
Forward voltage
I
F
= 20 mA V
F
0.83 0.87 V
I
F
= 100 mA V
F
1V
Diode capacitance V
F
= V
R
= 0, f = 1 MHz C
D
5pF
Reverse recovery time
I
F
= I
R
= 30 mA, i
R
= 3 mA,
R
L
= 100
t
rr
50 ns
18858
1000
100
10
1
0.1
0.01
I - Forward Current (mA)
F
0 0.4 0.6 0.8 10.2
V
F
- Forward Voltage (V)
T
j
= 100 °C
25 °C
0.1
0.2
0.3
0
0 30 60 90 120 150
18859
T
amb
- Ambient Temperature (°C)
I , I - Admissible Forward Current (A)
OF
ICurrent (rectif.)
O
DC current I
F
200
18864
T
amb
- Ambient Temperature (°C)
250
200
150
100
50
20 40 60 80 100 120 140 160 1800
0
P - Admissible Power Dissipation (mW)
tot
0.1
18862_4
1
10
100
1000
0 40 80 120 160 200
I
R
(T
j
)/I
R
(25 °C) - Leakage Current
T
j
- Junction Temperature (°C)
Reverse Voltage
GSD2004WS V
R
= 240 V
GSD2004WS
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 14-Oct-16
3
Document Number: 85730
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
1100.1
0.8
0.6
0.4
1.4
1.2
1.0
0.2
0
100
C - Diode Capacitance (pF)
D
V
R
- Reverse Voltage (V)
2.0
1.8
1.6
T
J
= 25 °C
22729
Rev. 6 - Date: 23.Sept.2016
17443
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Footprint recommendation:
0.6 [0.024]
1.1 [0.043]
1.5 [0.059]
2.50 [0.098]
2.85 [0.112]
1.60 [0.063]
1.95 [0.077]
0° - 8°
0.25 [0.010]
0.40 [0.016]
Cathode bar
0.20 [0.008]
0.40 [0.016]
0.8 [0.031]
0.2 [0.008]
1.15 [0.045]
0.10 [0.004]
0.1 [0.004] max.
0.15 [0.006]
1.6 [0.063]
0.8 [0.031] 0.8 [0.031]
P1-P3P4-P4

GSD2004WS-E3-08

Mfr. #:
Buy GSD2004WS-E3-08
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 300 Volt 225mA 50ns
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet