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QW-BB035
Chip Schottky Barrier Rectifier
REV:C
Comchip Technology CO., LTD.
Dimensions in inches and (millimeters)
D2PAK
Reverse Voltage: 40 to 200 Volts
Forward Current: 20.0 Amp
RoHS Device
CDBD2040-G Thru. CDBD20200-G
0.402(10.20)
0.386(9.80)
0.192(4.8)
0.176(4.4)
0.370(9.40)
0.354(9.00)
0.205(5.20)
0.189(4.80)
0.063(1.60)
0.055(1.40)
0.024(0.60)
0.016(0.40)
0.055(1.40)
0.047(1.20)
0.185(4.70)
0.169(4.30)
0.012(0.30)
0.004(0.10)
0.108(2.70)
0.092(2.30)
0.046(1.20)
0.032(0.80)
PIN 1
PIN 3
PIN 2
2
1
3
Maximum Ratings (At Ta=25°C, unless otherwise noted)
Company reserves the right to improve product design , functions and reliability without notice.
Features
- Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
- Low power loss, high efficiency.
- High current capability, low forward voltage drop.
- High surge capability.
- Guard ring for overvoltage protection.
- Ultra high-speed switching.
- Silicon epitaxial planar chip, metal silicon junction.
- Lead-free part meets environmental standards of
MIL-STD-19500 /228
Mechanical data
Case: TO-263/D2PAK, molded plastic.-
Terminals: Solder plated, Solderable per -
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.-
- Weight:1.46 grams (approx.).
Mounting Position: Any-
Parameter
Symbol
Unit
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
Maximum forward voltage
IF=10.0A
Maxium forward surge current, 8.3ms
singlehalf sine-wave superimposed on
rate load (JEDEC method)
VR=VRRM TA=25°C
TA=100°C
VR=VRRM
VRRM
VR
VRMS
IO
VF
IFSM
IR
RθJc
TJ
40
40
28
60
60
42
20.0
0.75
150
0.5
50
2.0
150
150
105
V
V
V
A
V
A
mA
°C/W
°C
0.55
Operating temperature
Storage temperature
TSTG
-65 to +175
°C
-55 to +125 -55 to +150
2040-G
CDBD
2060-G
CDBD
20150-G
CDBD
Junction to Case
100
100
70
20100-G
CDBD
20200-G
CDBD
200
200
140
0.85
IR
mA
Maximum Forward rectified current
(See fig. 1)
Typical thermal
resistance
1.00
Maximum
reverse current
45
45
31.5
2045-G
CDBD
