MGA-30116
150MHz – 1GHz
½ Watt High Linearity Ampli er
Data Sheet
Description
Avago Technologies’ MGA-30116 is a high linearity ½ Watt
PA with good OIP3 performance and exceptionally good
PAE at p1dB gain compression point, achieved through
the use of Avago Technologies’ proprietary 0.25um GaAs
Enhancement-mode pHEMT process.
The adjustable temperature compensated internal bias
circuit allowed the device to be operated at either class A
or class AB operation
The MGA-30116 is housed inside a standard 16 pin QFN
3X3 package.
Applications
Class A driver ampli er for GSM/CDMA Base Stations.
General purpose gain block.
Component Image
16 pins QFN 3x3
Notes:
Package marking provides orientation and identi cation
“30116” = Device Part Number
“YYWW” = Work Week and Year of manufacture
“XXXX” = Last 4 digit of Lot number
Features
High linearity and P1dB
Built in adjustable temperature compensated internal
bias circuitry
GaAs E-pHEMT Technology
[1]
Standard QFN 3X3 package
5V supply
Excellent uniformity in product speci cations
Tape-and-Reel packaging option available
MSL-1 and Lead-free
High MTTF for base station application
Speci cations
900MHz; 5V, 202.8mA (typical)
17.0 dB Gain
44.1 dBm Output IP3
27.7 dBm Output Power at 1dB gain compression
47.0% PAE at P1dB
2.0 dB Noise Figure
Notes:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
1 Vm
2 Vbias
3 RF in
4 NC
RFgnd 16
Vg 15
GND 14
NC 13
NC 12
VDD/RFout 11
VDD/RFout 10
NC 9
5 NC
6 NC
7 GND
8 NC
30116
YYWW
XXXX
TOP VIEW
BOTTOM VIEW
nc = not connected
GND
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
