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IXYP20N65C3D1
P1-P3
P4-P6
P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA20N65C3D1
IXYP20N65C3D1
Fi
g. 7. Trans
conduc
tance
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
40
45
50
I
C
- Am
p
e
re
s
g
f s
-
Si
emens
T
J
= - 40
ºC
25º
C
150º
C
V
CE
= 10
V
Fi
g. 10.
Rev
erse-
Bi
as Saf
e Oper
ati
ng Ar
ea
0
10
20
30
40
100
200
300
400
500
600
700
V
CE
- V
o
lts
I
C
-
Amper
es
T
J
= 150º
C
R
G
= 20
Ω
dv
/ dt
< 10V / n
s
Fi
g. 8.
Gate Charge
0
2
4
6
8
10
12
14
16
0
4
8
1
21
62
02
42
83
2
Q
G
- Nano
C
o
ulo
m
b
s
V
GE
- V
o
lts
V
CE
= 325V
I
C
= 20A
I
G
= 10
mA
Fi
g. 9. C
apaci
tance
10
100
1,
000
10,
000
0
5
1
0
15
20
25
30
35
40
V
CE
- Vo
lts
Capaci
tance -
Pi
coFarad
s
f
= 1
MH
z
C
ies
C
oes
C
res
Fi
g. 11. Forw
ard-B
i
as Safe Oper
ati
ng Area
0.1
1
10
100
1000
1
10
100
1000
V
DS
- Vo
lts
I
D
- A
m
p
er
e
s
T
J
= 175º
C
T
C
= 25
º
C
Sin
gl
e Pu
l
se
25µs
1ms
10m
s
V
CE
(s
a
t
)
Limi
t
100µs
DC
Fi
g. 12. Maxi
mum Transi
ent Thermal
I
mpedance (I
GB
T)
0.01
0.
1
1
1.E-
06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.
E+00
Pu
lse Widt
h
- Secon
d
Z
(th)JC
- ºC
/ W
D
=
t
p
/ T
t
p
T
D =
0.
5
D =
0.
2
D =
0.
1
D =
0.
05
D =
0.
02
D =
0.
01
Single
P
ulse
© 2015 IXYS CORPORATION, All Rights Reserved
Fi
g. 13. I
nducti
v
e Sw
i
tchi
ng En
ergy
Loss v
s.
G
ate R
esi
st
ance
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
20
30
40
50
60
7
0
80
90
100
R
G
- Ohms
E
of
f
- M
illiJ
o
u
le
s
0
1
2
3
4
5
6
7
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
T
J
= 150º
C , V
GE
= 15V
V
CE
= 4
00
V
I
C
= 20
A
I
C
= 40
A
Fi
g. 1
6. Inducti
v
e Turn-off Sw
i
tching Ti
mes
v
s
.
Gat
e Resi
stance
20
25
30
35
40
45
50
55
20
3
0
40
50
60
70
80
90
100
R
G
- Ohm
s
t
f i
- Nanoseconds
60
90
120
150
180
210
240
270
t
d
(o
ff)
-
Nan
osecon
ds
t
f i
t
d(off)
- - - -
T
J
= 1
5
0
ºC
, V
GE
= 15V
V
CE
= 4
0
0
V
I
C
= 20
A
I
C
= 40A
Fi
g. 14. I
nducti
v
e Sw
i
tchi
ng E
nergy
Loss v
s.
Coll
ec
to
r Curren
t
0.0
0.2
0.4
0.6
0.8
1.0
1.2
10
15
20
25
30
35
40
I
C
- Am
peres
E
of
f
- MilliJ
oules
0.0
0.4
0.8
1.2
1.6
2.0
2.4
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
R
G
= 20
Ω
,
V
GE
= 15
V
V
CE
= 400V
T
J
= 150º
C
T
J
= 25
º
C
Fi
g. 1
5. Inducti
v
e Sw
i
tch
i
ng Ene
rgy
Los
s v
s.
Junc
ti
on Te
mperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
150
T
J
-
Degrees C
ent
i
gra
de
E
off
- M
illiJ
o
u
le
s
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
E
on
-
M
illiJ
o
u
le
s
E
off
E
on
- - - -
R
G
= 20
Ω
,
V
GE
= 15V
V
CE
= 400V
I
C
= 20A
I
C
= 40A
Fi
g. 17. I
nducti
v
e Turn-off
Sw
i
tchi
ng Ti
mes v
s.
Coll
ec
to
r Curre
nt
20
25
30
35
40
45
50
55
10
15
20
25
30
35
40
I
C
-
Amperes
t
f i
- N
a
n
o
s
e
c
o
n
d
s
60
70
80
90
100
110
120
130
t
d(
off
)
-
Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 20
Ω
, V
GE
= 15
V
V
CE
= 40
0
V
T
J
= 150º
C
T
J
= 25º
C
F
ig
.
1
8
.
In
d
u
c
t
iv
e
T
u
r
n
-
o
f
f
S
witc
h
in
g
T
im
e
s
v
s
.
Juncti
on Temperature
20
24
28
32
36
40
44
25
50
75
100
125
150
T
J
-
Degrees Cen
tigr
a
de
t
f i
-
Nanosecond
s
64
72
80
88
96
104
112
t
d
(o
ff)
-
Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 20
Ω
, V
GE
= 15
V
V
CE
= 400V
I
C
= 20A
I
C
= 40
A
IXYA20N65C3D1
IXYP20N65C3D1
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA20N65C3D1
IXYP20N65C3D1
Fi
g. 20. I
nducti
v
e Turn-on Sw
i
tchi
ng Ti
mes v
s.
Coll
e
c
tor Cu
rre
nt
0
10
20
30
40
50
60
70
80
90
100
10
15
20
25
30
35
40
I
C
- Am
p
e
re
s
t
r i
-
Nanosecond
s
10
12
14
16
18
20
22
24
26
28
30
t
d(
on)
-
Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150º
C
T
J
= 25º
C
Fi
g. 21. I
nduct
i
v
e Turn-
on Sw
i
tchi
ng Ti
mes v
s.
Juncti
on Temper
ature
0
20
40
60
80
100
120
25
50
75
100
125
150
T
J
-
Degre
es Cen
ti
gr
a
de
t
r i
-
Nanosecond
s
10
14
18
22
26
30
34
t
d(
on)
-
Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 40
A
I
C
= 20
A
Fi
g. 19. I
nduct
i
v
e Turn-
on Sw
i
tchi
ng Ti
mes v
s.
Gat
e Resi
stance
0
40
80
120
160
200
240
280
20
30
40
50
60
70
80
9
0
100
R
G
- O
hms
t
r i
- N
a
n
o
s
e
c
o
n
d
s
0
20
40
60
80
100
120
140
t
d(on)
-
Na
nosecond
s
t
r i
t
d(on)
- - - -
T
J
= 150º
C, V
GE
= 15V
V
CE
= 400V
I
C
= 40A
I
C
= 20A
Fi
g. 22. Di
ode Forw
ard C
haracteri
sti
cs
0
5
10
15
20
25
30
35
40
00
.
5
11
.
5
22
.
5
V
F
(V
)
I
F
(A
)
T
J
= 150º
C
T
J
= 25º
C
Fi
g. 23. R
ev
erse Recovery
Charge vs. -di
F
/dt
0.4
0.6
0.8
1.0
1.2
1.4
1.6
200
300
400
500
600
700
800
900
1000
1100
1200
-d
i
F
/ d
t (A
/µs
)
Q
RR
(µC
)
T
J
= 150º
C
V
R
= 400V
I
F
= 30
A
20A
10A
P1-P3
P4-P6
P7-P7
IXYP20N65C3D1
Mfr. #:
Buy IXYP20N65C3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
TNT
EMS
Payment:
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