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UH4PBC-M3/87A

P1-P3P4-P5
UH4PBC, UH4PCC, UH4PDC
www.vishay.com
Vishay General Semiconductor
Revision: 29-May-12
1
Document Number: 88991
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount Ultrafast Rectifiers
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters and
inverters for consumer computer, automotive, and
telecommunication applications.
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Low forward voltage drop, low power loss
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 2.0 A
V
RRM
100 V, 150 V, 200 V
I
FSM
40 A
t
rr
25 ns
V
F
at I
F
= 2.0 A 0.77 V
T
J
max. 175 °C
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMP
®
Series
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UH4PBC UH4PCC UH4PDC UNIT
Device marking code H4BC H4CC H4DC
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Maximum average forward rectified current
(fig. 1)
total devive
I
F(AV)
4.0 A
per diode 2.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
I
FSM
40 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 175 °C
UH4PBC, UH4PCC, UH4PDC
www.vishay.com
Vishay General Semiconductor
Revision: 29-May-12
2
Document Number: 88991
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤ 40 ms
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
Note
(1)
Automotive grade
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
per diode
I
F
= 1.0 A
T
A
= 25 °C
V
F
(1)
0.84 -
V
I
F
= 2.0 A 0.93 1.05
I
F
= 1.0 A
T
A
= 125 °C
0.68 -
I
F
= 2.0 A 0.77 0.85
Reverse current per diode Rated V
R
T
A
= 25 °C
I
R
(2)
-5
μA
T
A
= 125 °C 6.4 25
Maximum reverse recovery time per diode
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
20 25 ns
Typical reverse recovery time per diode
I
F
= 1.0 A, dI/dt = 50 A/µs,
V
R
= 30 V, I
rr
= 0.1 I
RM
24 -
Typical softness factor (t
b
/t
a
)per diode
I
F
= 2 A, dI/dt = 200 A/µs,
V
R
= 200 V, I
rr
= 0.1 I
RM
T
A
= 125 °C
S0.3 - -
Typical reverse recovery current per diode I
RM
5.4 - A
Typical stored charge per diode Q
rr
88 - nC
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
21 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise specified)
PARAMETER SYMBOL UH4PBC UH4PCC UH4PDC UNIT
Typical thermal resistance per diode
R
θJA
(1)
60
°C/W
R
θJL
4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
UH4PDC-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
UH4PDC-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
UH4PDCHM3/86A
(1)
0.10 86A 1500 7" diameter plastic tape and reel
UH4PDCHM3/87A
(1)
0.10 87A 6500 13" diameter plastic tape and reel
UH4PBC, UH4PCC, UH4PDC
www.vishay.com
Vishay General Semiconductor
Revision: 29-May-12
3
Document Number: 88991
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
1
2
3
4
5
0 25 50 75 100 125 150 175
Average Forward Rectified Current (A)
Lead Temperature (°C)
Resistive or Inductive Load
T
L
measured
at the Cathode Band Terminal
0
0.4
0.8
1.2
1.6
2.2
0 0.4 1.2 1.6 2.0 2.4
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
Average Power Loss (W)
D = t
p
/T t
p
T
0.2
0.6
1.0
1.4
2.0
1.8
0.4
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
10
100
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Junction to Ambient
0.01 0.1 1 10 100
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

UH4PBC-M3/87A

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Buy UH4PBC-M3/87A
Manufacturer:
Vishay
Description:
Rectifiers 4.0A 100 Volt 25ns Dual 40 Amp IFSM
Lifecycle:
New from this manufacturer.
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