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DMC3021LSDQ-13

P1-P3P4-P6P7-P8
DMC3021LSDQ
Document number: DS37338 Rev. 1 - 2
1 of 8
www.diodes.com
June 2014
© Diodes Incorporated
DMC3021LSDQ
NEW PRODUCT
D2
S2
G2
D1
S1
G1
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(on)
max
I
D
Max
T
A
= +25°C
Q2 30V
21mΩ @ V
GS
= 10V
8.5A
32mΩ @ V
GS
= 4.5V
7.2A
Q1 -30V
39mΩ @ V
GS
= -10V
-7A
53mΩ @ V
GS
= -4.5V
-5.6A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Power Management Functions
• Analog Switch
• Load Switch
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
Ordering Information (Note 5)
Part Number Case Packaging
DMC3021LSDQ-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
Top View
Top View
S2
D1
S1
D2
G1
G2
D2
D1
N-Channel MOSFET
P-Channel MOSFET
1
4
8
5
C3021LD
Y
Y W
W
e3
= Manufacturer’s Marking
C3021LD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking
DMC3021LSDQ
Document number: DS37338 Rev. 1 - 2
2 of 8
www.diodes.com
June 2014
© Diodes Incorporated
DMC3021LSDQ
NEW PRODUCT
Maximum Ratings N-CHANNEL – Q2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
8.5
7.1
A
Pulsed Drain Current (Note 7)
I
DM
26 A
Maximum Ratings P-CHANNEL – Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Unit
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
-7.0
-4.5
A
Pulsed Drain Current (Note 7)
I
DM
-25 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Unit
Power Dissipation (Note 6)
P
D
2.5 W
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
50 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics N-CHANNEL – Q2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30
— —
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
1.0 µA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1 1.45 2.1 V
V
DS
= V
GS
, I
C
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
—
14 21
mΩ
V
GS
= 10V, I
C
= 7A
18 32
V
GS
= 4.5V, I
C
= 5.6A
Forward Transfer Admittance
|Y
fs
|
—
8.1 — S
V
DS
= 5V, I
C
= 7A
Diode Forward Voltage (Note 8)
V
SD
—
0.7 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 767 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
— 110 —
pF
Reverse Transfer Capacitance
C
rss
— 105 —
pF
Gate Resistance
R
g
— 1.4 —
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 7.8 —
nC
V
DS
= 15V, I
D
= 9A
Total Gate Charge (V
GS
= 10V) Q
g
— 16.1 —
nC
Gate-Source Charge
Q
gs
— 1.8 —
nC
Gate-Drain Charge
Q
gd
— 2.5 —
nC
Turn-On Delay Time
t
D(on)
— 5.0 —
ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 6Ω , I
D
= 1A
Turn-On Rise Time
t
r
— 4.5 —
ns
Turn-Off Delay Time
t
D(off)
— 26.3 —
ns
Turn-Off Fall Time
t
f
— 8.55 —
ns
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMC3021LSDQ
Document number: DS37338 Rev. 1 - 2
3 of 8
www.diodes.com
June 2014
© Diodes Incorporated
DMC3021LSDQ
NEW PRODUCT
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
30
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
25
20
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0
5
10
15
20
25
30
01 2 34
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.01
0.1
1
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = 4.5V
GS
V = 2.5V
GS
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
0
0.01
0.02
0.03
0.06
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
0.05
0.04
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 10V
I = 11.6A
GS
D
V = 4.5V
I = 10A
GS
D
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0
0.01
0.02
0.03
0.0
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0.04
V = 10V
I = 11.6A
GS
D
V = 4.5V
I = 10A
GS
D
P1-P3P4-P6P7-P8

DMC3021LSDQ-13

Mfr. #:
Buy DMC3021LSDQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS 30V Comp Pair
Lifecycle:
New from this manufacturer.
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