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TSHG5410

P1-P3P4-P5
TSHG5410
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 23-Aug-11
1
Document Number: 81811
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
DESCRIPTION
TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λ
p
= 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 18°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f
c
= 18 MHz
• Good spectral matching with CMOS cameras
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm) tr (ns)
TSHG5410 90 ± 18 850 20
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHG5410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
180 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
R
thJA
230 K/W
TSHG5410
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 23-Aug-11
2
Document Number: 81811
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.5 1.8 V
I
F
= 1 A, t
p
= 100 μs V
F
2.3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
45 90 135 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
900 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
55 mW
Temperature coefficient of φ
e
I
F
= 100 mA TKφ
e
- 0.35 %/K
Angle of half intensity ϕ ± 18 deg
Peak wavelength I
F
= 100 mA λ
p
820 850 880 nm
Spectral bandwidth I
F
= 100 mA Δλ 40 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.25 nm/K
Rise time I
F
= 100 mA t
r
20 ns
Fall time I
F
= 100 mA t
f
13 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
18 MHz
Virtual source diameter d2.1mm
TSHG5410
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 23-Aug-11
3
Document Number: 81811
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Pulse Forward Current vs. Pulse Duration
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Radiant Power vs. Forward Current
Fig. 6 - Relative Radiant Power vs. Wavelength
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
t
p
- Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
I
F
- Forward Current (mA)
18873
I
F
- Forward Current (mA)
1000
100
10
1
V
F
- Forward Voltage (V)
024
t
p
= 100 µs
t
p
/T = 0.001
13
1
10
100
1000
1 10 100 1000
t
P
= 0.1 ms
21308
I
F
- Forward Current (mA)
I
e
- Radiant Intensity (mW/sr)
0.1
1
10
100
1000
11 0 100 1000
16971
I
F
- Forward Current (mA)
- Radiant Power (mW)
e
800 850
λ- Wavelength (nm)
900
16972
0
0.25
0.5
0.75
1.0
1.25
Φ
e, rel
- Relative Radiant Power
21355
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.2
0.4
I
e rel
- Relative Radiant Intensity
ϕ - Angular Displacement
P1-P3P4-P5

TSHG5410

Mfr. #:
Buy TSHG5410
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters 850nm, T-1 , 90mW/sr, +/-18degrees
Lifecycle:
New from this manufacturer.
Delivery:
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